Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate

2019 ◽  
Vol 30 (3) ◽  
pp. 3013-3018 ◽  
Author(s):  
Wen-Jie Liu ◽  
Xiao-Long Hu ◽  
Yi-Jun Liu
Keyword(s):  
Sapphire Substrate ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Performance Enhancement ◽  
Insulating Layer ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Near Ultraviolet

Optimized double-sided pattern design on a patterned sapphire substrate for flip-chip GaN-based light-emitting diodes

2015 ◽  
Vol 54 (11) ◽  
pp. 115108 ◽  
Author(s):  
Zhen Che ◽  
Jun Zhang ◽  
Xinyu Yu ◽  
Mengyuan Xie ◽  
Jianhui Yu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Pattern Design ◽  
Patterned Sapphire Substrate ◽  
Light Emitting

scholarly journals Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Light Emitting Diodes ◽  
Ex Situ ◽  
Initial Growth ◽  
Patterned Sapphire Substrate ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

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