In situDeep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1247 ◽

2004 ◽

Vol 43 (No. 10A) ◽

pp. L1247-L1249 ◽

Author(s):

Tomonobu Tsuchiya ◽

Takeshi Kitatani ◽

Kiyoshi Ouchi ◽

Hiroshi Sato ◽

Masahiko Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Buried Heterostructure ◽

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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Facet growth of AlxGa1-xAs with HCl gas by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91064-2 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 283-290 ◽

Author(s):

K. Shimoyama ◽

N. Hosoi ◽

K. Fujii ◽

H. Gotoh

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Hcl Gas ◽

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Fabrication of AlxGa1-xAs buried heterostructure laser diodes by in-situ gas etching and selective-area metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91157-6 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 881-885 ◽

Author(s):

Y. Inoue ◽

K. Shimoyama ◽

K. Fujii ◽

N. Hosoi ◽

H. Gotoh

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area ◽

Heterostructure Laser ◽

Buried Heterostructure

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All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer

Applied Physics Letters ◽

10.1063/1.1313374 ◽

2000 ◽

Vol 77 (13) ◽

pp. 1934-1936

Author(s):

Hyun-Chul Ko ◽

Takahiro Nakamura ◽

Tomoaki Koui ◽

Naofumi Suzuki ◽

Kazuhiro Shiba ◽

...

Keyword(s):

Vapor Phase ◽

Laser Diodes ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Heterostructure Laser ◽

Current Confinement ◽

Buried Heterostructure

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Self‐aligned buried‐heterostructure lasers grown entirely by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.108729 ◽

1993 ◽

Vol 62 (11) ◽

pp. 1188-1190 ◽

Author(s):

Y. Kondo ◽

K. Sato ◽

M. Yamamoto

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Buried Heterostructure

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In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.09.018 ◽

2004 ◽

Vol 272 (1-4) ◽

pp. 125-130 ◽

Author(s):

T. Tsuchiya ◽

T. Kitatani ◽

K. Ouchi ◽

H. Sato ◽

M. Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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1.3-μm buried-heterostructure lasers using a CH/sub 4/ reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy

Proceedings of 8th International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1996.492263 ◽

2002 ◽

Author(s):

Y. Kondo ◽

K. Kishi ◽

M. Itoh ◽

H. Oohashi ◽

Y. Itaya ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Mesa Structure ◽

Buried Heterostructure

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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