Facet growth of AlxGa1-xAs with HCl gas by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91064-2 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 283-290 ◽

Author(s):

K. Shimoyama ◽

N. Hosoi ◽

K. Fujii ◽

H. Gotoh

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Hcl Gas ◽

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In situDeep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1247 ◽

2004 ◽

Vol 43 (No. 10A) ◽

pp. L1247-L1249 ◽

Author(s):

Tomonobu Tsuchiya ◽

Takeshi Kitatani ◽

Kiyoshi Ouchi ◽

Hiroshi Sato ◽

Masahiko Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Buried Heterostructure ◽

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In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.09.018 ◽

2004 ◽

Vol 272 (1-4) ◽

pp. 125-130 ◽

Author(s):

T. Tsuchiya ◽

T. Kitatani ◽

K. Ouchi ◽

H. Sato ◽

M. Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry

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Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs

Journal of Applied Physics ◽

10.1063/1.363811 ◽

1996 ◽

Vol 80 (12) ◽

pp. 6819-6826 ◽

Author(s):

J. W. Huang ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Shallow Impurities

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Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.3462294 ◽

2010 ◽

Vol 97 (1) ◽

pp. 013502 ◽

Author(s):

Kuo-Hua Chang ◽

Jinn-Kong Sheu ◽

Ming-Lun Lee ◽

Shang-Ju Tu ◽

Chih-Ciao Yang ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1234 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1234-1238 ◽

Author(s):

Yuji Furushima ◽

Hiroyuki Yamazaki ◽

Koji Kudo ◽

Yasutaka Sakata ◽

Yuichiro Okunuki ◽

...

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Laser Diodes ◽

Spot Size ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Power Characteristics ◽

Heterostructure Laser ◽

Buried Heterostructure

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A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.124481 ◽

1999 ◽

Vol 75 (5) ◽

pp. 683-685 ◽

Author(s):

L. Li ◽

B.-K. Han ◽

D. Law ◽

C. H. Li ◽

Q. Fu ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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