Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
2004 ◽
Vol 43
(No. 12A)
◽
pp. L1520-L1523
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2000 ◽
Vol 18
(5)
◽
pp. 2513
◽
2002 ◽
Vol 49
(3)
◽
pp. 354-360
◽
2000 ◽
Vol 47
(5)
◽
pp. 1115-1117
◽
2011 ◽
Vol 29
(3)
◽
pp. 03C107
◽
2006 ◽
Vol E89-C
(7)
◽
pp. 906-912
◽
2005 ◽