Improving the Performance of Organic Field Effect Transistor by Optimizing the Gate Insulator Surface

2005 ◽  
Vol 44 (6A) ◽  
pp. 3721-3727 ◽  
Author(s):  
Achmad Zen ◽  
Dieter Neher ◽  
Kamel Silmy ◽  
Andreas Holländer ◽  
Udom Asawapirom ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Organic Field Effect Transistor ◽  
Insulator Surface ◽  
Effect Transistor

Ambipolar organic field-effect transistor using gate insulator hysteresis

2005 ◽  
Vol 86 (14) ◽  
pp. 143513 ◽  
Author(s):  
Eriko Mizuno ◽  
Masateru Taniguchi ◽  
Tomoji Kawai
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Low voltage vertical organic field-effect transistor with polyvinyl alcohol as gate insulator

2011 ◽  
Vol 110 (9) ◽  
pp. 094508 ◽  
Author(s):  
Lucieli Rossi ◽  
Keli F. Seidel ◽  
Wagner S. Machado ◽  
Ivo A. Hümmelgen
Keyword(s):  
Polyvinyl Alcohol ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Gate Insulator ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

NANOSCALE GATE INSULATOR FOR ORGANIC FIELD EFFECT TRANSISTOR APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 765-769 ◽  
Author(s):  
A. DAS ◽  
S. RAJAGOPALAN ◽  
S. DHARA ◽  
K. PRABAKAR ◽  
S. DASH ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Grazing Incidence ◽  
Electron Beam Evaporation ◽  
Gate Insulator ◽  
Organic Field Effect Transistor ◽  
High Capacitance ◽  
Force Microscopy ◽  
Low Leakage ◽  
Effect Transistor

The High k thin films of ZrO2 were deposited by electron beam evaporation for creating high capacitance devices. Capacitance as high as 0.2 μF/cm2 is obtained for the 80 nm thick ZrO2 films that forms thickness equivalent of SiO2 ~16 nm (t eq ). Grazing incidence XRD confirmed crystalline tetragonal phase. Morphology of ZrO2 films investigated using atomic force microscopy showed high roughness and pin holes that related to high leakage current. Whereas low leakage anodized Al nanogate insulator (t eq of SiO2 ~ 3.55 nm) were prepared varying the voltage and utilized as high capacitance gate oxide to realize low powered organic field effect transistor with polytriarylamine semiconductor. The observed threshold voltage is 0.35V.

Spatial Extent of Interaction between Excitons and Polarons in a Bilayer Organic Field-Effect Transistor

ACS Photonics ◽  
2021 ◽  
Author(s):  
Haripriya Kesavan ◽  
Subhamoy Sahoo ◽  
Sanjoy Jena ◽  
Jayeeta Bhattacharyya ◽  
Debdutta Ray
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Spatial Extent ◽  
Organic Field Effect Transistor ◽  
Effect Transistor
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