Correlation between Natural Oxidation Process and Photoluminescence Properties of Hydrogenated Si Nanocrystallites Prepared by Pulsed Laser Ablation

2005 ◽  
Vol 44 (12) ◽  
pp. 8742-8746 ◽  
Author(s):  
Kimihisa Matsumoto ◽  
Mitsuru Inada ◽  
Ikurou Umezu ◽  
Akira Sugimura
2020 ◽  
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pp. 21667-21680 ◽  
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M.A. Domínguez-Crespo ◽  
E. Rodríguez ◽  
A.M. Torres-Huerta ◽  
I.J. Soni-Castro ◽  
S.B. Brachetti-Sibaja ◽  
...  

2001 ◽  
Vol 15 (1-2) ◽  
pp. 129-131 ◽  
Author(s):  
I. Umezu ◽  
G. Yamazaki ◽  
T. Yamaguchi ◽  
A. Sugimura ◽  
T. Makino ◽  
...  

2002 ◽  
Vol 416 (1-2) ◽  
pp. 106-113 ◽  
Author(s):  
A MASUDA ◽  
S USUI ◽  
Y YAMANAKA ◽  
Y YONEZAWA ◽  
T MINAMIKAWA ◽  
...  

2015 ◽  
Author(s):  
T. Tanaka ◽  
T. Shimogaki ◽  
F. Nagasaki ◽  
M. Higashihata ◽  
D. Nakamura ◽  
...  

1997 ◽  
Vol 486 ◽  
Author(s):  
I. Umezu ◽  
S. Yamaguchi ◽  
K. Shibata ◽  
A. Sugimura ◽  
Y. Yamada ◽  
...  

AbstractThe inert-gas-ambient pulsed laser ablation technique is a promising method for preparing Si nanocrystallites. We measured the temperature dependence of photoluminescence (PL) spectra to investigate radiative and nonradiative recombination processes in the nanocrystallites prepared using this method. The Si nanocrystallites showed visible PL bands in the red (1.6 eV) and green (2.1 eV) spectral regions. The intensities of the red and green PL increased with decreasing temperature and then saturated below 80 K. This temperature dependence was compared with that of other photoluminescent Si materials. It was shown that the PL quantum efficiency of the Si nanocrystallites was larger than that of a-Si:H at high temperatures. One of the reasons for the difference in the temperature dependence between the Si nanocrystallite and a-Si:H is the change in the role of defects in the nonradiative recombination process.


Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


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