Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon

2007 ◽  
Vol 46 (10A) ◽  
pp. 6489-6497 ◽  
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Grain Boundaries ◽  
Structural Properties ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Recombination Activity ◽  
Carrier Recombination

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

2007 ◽  
Vol 131-133 ◽  
pp. 9-14 ◽  
Author(s):  
J. Chen ◽  
Takashi Sekiguchi ◽  
S. Ito ◽  
De Ren Yang
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Structural Properties ◽  
Tilt Angle ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Carrier Recombination ◽  
Electron Beam Induced Current

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

Origin of recombination activity at small angle grain boundaries in multicrystalline silicon using multi-seed casting growth method

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD16 ◽  
Author(s):  
Takuto Kojima ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Ronit R. Prakash ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Recombination Activity ◽  
Growth Method

Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

2012 ◽  
Vol 5 (4) ◽  
pp. 042301 ◽  
Author(s):  
Takashi Sameshima ◽  
Naoto Miyazaki ◽  
Yuki Tsuchiya ◽  
Hiroki Hashiguchi ◽  
Tomihisa Tachibana ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Metal Impurities

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

2005 ◽  
Vol 52 (12) ◽  
pp. 1211-1215 ◽  
Author(s):  
J CHEN ◽  
T SEKIGUCHI ◽  
R XIE ◽  
P AHMET ◽  
T CHIKYO ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Electron Beam Induced Current

Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon

2014 ◽  
Vol 53 (11) ◽  
pp. 112401 ◽  
Author(s):  
Masaki Funakoshi ◽  
Norihiro Ikeno ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Koji Arafune ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Room Temperature ◽  
Multicrystalline Silicon ◽  
Room Temperature Photoluminescence
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