Влияние дополнительной имплантации ионов кислорода на дислокационную люминесценцию кремния, содержащего кислородные преципитаты

Dislocation-related photoluminescence is studied in unimplanted and implanted with oxygen ions silicon wafers after multistage heat treatment, used for the formation of internal getter in microelectronics, and final annealing at 1000°С in a chlorine-containing atmosphere. In unimplanted sample, the dislocation-related luminescence line D1 dominates and its intensity is more than one order of magnitude in comparison with another dislocation-related luminescence line D2. With increasing temperature, an intensity of the D1 line increases and then decreases. In implanted sample, the intensities of the D1 and D2 lines increase. For both the lines, temperature quenching of their intensities is observed only. The energies of quenching and increase of the intensities of dislocation-related photoluminescence lines are determined. Possible reasons of observed effects are discussed.

Влияние деформации сжатия и растяжения на спектр дислокационной люминесценции в кремнии

Photoluminescence has been studied in silicon deformed by four-point bending at temperature of 600◦C. So-called dislocation-related luminescence lines D1, D2, D3 and D4 are observed from both the sides of the deformed samples. It is found that in the samples with the induced dislocation density ~10^7 cm^−2, a luminescence intensity of the D3 and D4 lines is the same on both the sample sides, and the intensity of the D1 and D2 lines from the tensile side is higher than that from the compressive side. Behavior of the intensity of the D1 and D2 lines is well correlated with a quantity of dislocation trails. Possible reasons of observed effect are discussed.

Дислокационная фотолюминесценция в кремнии, имплантированном ионами германия

The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-energy ions demonstrates that implantation with 1-MeV germanium ions at a dose of 1 . 5 × 10^14 cm^–2 does not lead to the amorphization of single-crystal silicon. It is found that subsequent high-temperature annealing of the implanted samples in a chlorine-containing atmosphere at a temperature of 1100°C for 0.5–1.5 h gives rise to so-called D1 and D2 dislocation-related luminescence lines with wavelengths of 1.54 and 1 . 42 μm. With increasing annealing duration, the intensity of the D1 line decreases and that of D2 remains constant, but the D1 line dominates in all the spectra. The possible factors responsible for a decrease in the intensity of the D1 line and, in particular, the diffusion of germanium atoms and the formation of a silicon–germanium solid solution are discussed.

Влияние примеси бора на излучательные свойства дислокационных структур в кремнии, сформированных путем имплантации ионов Si-=SUP=-+-=/SUP=-

The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si^+ ion implantation with subsequent annealing is studied. It is shown that the implantation of B^+ ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.