Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon

2014 ◽  
Vol 53 (11) ◽  
pp. 112401 ◽  
Author(s):  
Masaki Funakoshi ◽  
Norihiro Ikeno ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Koji Arafune ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Room Temperature ◽  
Multicrystalline Silicon ◽  
Room Temperature Photoluminescence

Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

2012 ◽  
Vol 5 (4) ◽  
pp. 042301 ◽  
Author(s):  
Takashi Sameshima ◽  
Naoto Miyazaki ◽  
Yuki Tsuchiya ◽  
Hiroki Hashiguchi ◽  
Tomihisa Tachibana ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Metal Impurities

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

2005 ◽  
Vol 52 (12) ◽  
pp. 1211-1215 ◽  
Author(s):  
J CHEN ◽  
T SEKIGUCHI ◽  
R XIE ◽  
P AHMET ◽  
T CHIKYO ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Electron Beam Induced Current

D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si

2009 ◽  
Vol 156-158 ◽  
pp. 561-565
Author(s):  
Takashi Sekiguchi ◽  
Woong Lee ◽  
Jun Chen ◽  
Bin Chen
Keyword(s):  
Electron Beam ◽  
Optical Property ◽  
Dislocation Density ◽  
Grain Boundaries ◽  
Small Angle ◽  
Room Temperature ◽  
Large Angle ◽  
Line Emission ◽  
Induced Current ◽  
Electron Beam Induced Current

We have characterized optical property of small-angle (SA) grain-boundaries (GBs) in high-pure multicrystalline Si by using cathodoluminescence (CL). Prior to CL measurement, the electrical activity of GBs were evaluated by using electron-beam-induced current (EBIC). The SA-GBs are categorized into two groups with room temperature (RT-) EBIC contrast. The SA-GBs with misorientation angle about 1º give weak RT-EBIC contrast and yield D3 and D4. The SA-GBs with 2.5º show strong EBIC contrast and yield D1 and D2. These correspondences reflect the dislocation density at the SA-GBs. We also found the curious distribution of D1 emission in some special GBs, which is now difficult to explain. It is noticed that large-angle GBs do not show any D-line emissions at all.

Origin of recombination activity at small angle grain boundaries in multicrystalline silicon using multi-seed casting growth method

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD16 ◽  
Author(s):  
Takuto Kojima ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Ronit R. Prakash ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Recombination Activity ◽  
Growth Method

Impacts of Metal Impurities on Recombination Properties at Small Angle Grain Boundaries in Multicrystalline Silicon for Solar Cells

2019 ◽  
Vol 41 (4) ◽  
pp. 29-36 ◽  
Author(s):  
Takashi Sameshima ◽  
Yuki Tsuchiya ◽  
Naoto Miyazaki ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Metal Impurities
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