Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells

2007 ◽  
Vol 46 (No. 47) ◽  
pp. L1152-L1154 ◽  
Author(s):  
Ihsanul Afdi Yunaz ◽  
Akira Yamada ◽  
Makoto Konagai
1998 ◽  
Vol 507 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Banerjee ◽  
S. Sugiyama

ABSTRACTTwo significant developments took place in 1997 in the field of amorphous silicon alloy photovoltaic technology. First, a world record stable cell efficiency of 13% was demonstrated using a spectral-splitting, triple-junction structure. Second, a triple-junction photovoltaic manufacturing facility of an annual capacity of 5 MW was commissioned. In order to make the transition from R&D to production, critical material issues and deposition methods which ensure the lowest module cost per delivered watt needed to be evaluated. In this paper, we discuss some of these issues with special reference to the cell materials.


1998 ◽  
Vol 507 ◽  
Author(s):  
J. Yang ◽  
S. Sugiyama ◽  
S. Guha

ABSTRACTWe have studied amorphous silicon alloy solar cells made by using a modified-very-highfrequency glow discharge at 75 MHz with a deposition rate of ∼6 Å/s. The solar cell performance is compared with those made from conventional glow discharge at 13.56 MHz with lower deposition rates. Cells made at ∼6 Å/s with 75 MHz showed comparable stabilized efficiency to those made at ∼3 Å/s with 13.56 MHz. The best performance, however, was obtained with ∼1 Å/s, including a stabilized 9.3% a-Si alloy single-junction cell employing conventional glow discharge technique. Using 75 MHz, we have achieved 11.1% and 10.0% initial active-area efficiencies for a-Si alloy and a-SiGe alloy n i p cells, respectively. An initial efficiency of 11.0% has also been obtained in a dual bandgap double-junction structure.


Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Pawlikiewicz ◽  
T. Glatfelter ◽  
R. Ross ◽  
...  

1989 ◽  
Vol 54 (23) ◽  
pp. 2330-2332 ◽  
Author(s):  
S. Guha ◽  
J. Yang ◽  
A. Pawlikiewicz ◽  
T. Glatfelter ◽  
R. Ross ◽  
...  

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