Galvanomagnetic Effects in p-Type Tellurium at Low Temperatures. III. – Impurity Band Conduction and Negative Magneto-resistance in Sb-Doped Crystals –

1973 ◽  
Vol 34 (6) ◽  
pp. 1548-1560 ◽  
Author(s):  
Kôki Takita ◽  
Takaaki Hagiwara ◽  
Shoji Tanaka
2012 ◽  
Vol 101 (8) ◽  
pp. 082106 ◽  
Author(s):  
Brendan Gunning ◽  
Jonathan Lowder ◽  
Michael Moseley ◽  
W. Alan Doolittle

2018 ◽  
Vol 84 ◽  
pp. 115-118 ◽  
Author(s):  
Guiying Shen ◽  
Youwen Zhao ◽  
Yongbiao Bai ◽  
Ding Yu ◽  
Jingming Liu ◽  
...  

1982 ◽  
Vol 60 (1) ◽  
pp. 102-108
Author(s):  
B. A. Lombos ◽  
M. Averous ◽  
C. Fau ◽  
J. Calas ◽  
S. Charar

Transport property measurements on p-type germanium, doped to be in the intermediate concentration region (1016 < NA < 1018 cm−3), were performed in the temperature range of 1.6–77 K under static (up to 337 MPa) and modulated (2.4 on 180 MPa) uniaxial compression. To elucidate the conduction mechanisms in this region the position of the Fermi level is calculated as a function of temperature and uniaxial stress and correlated to the variation of the measured transport properties. The analyses indicate an Anderson type metallic conduction, characteristic of random, amorphous systems, while the Fermi level is in the impurity band. Mott type metallic conduction, characteristic to periodic systems, determines the transport properties as the Fermi level moves out of the impurity band.


1971 ◽  
Vol 31 (5) ◽  
pp. 1469-1478 ◽  
Author(s):  
Kôki Takita ◽  
Takaaki Hagiwara ◽  
Shoji Tanaka

2011 ◽  
Vol 208 (12) ◽  
pp. 2753-2759 ◽  
Author(s):  
P. H. Michael Böttger ◽  
Gregory S. Pomrehn ◽  
G. Jeffrey Snyder ◽  
Terje G. Finstad

1983 ◽  
Vol 117 (1) ◽  
pp. 407-416
Author(s):  
K. D. Chaudhuri ◽  
Anita Malik ◽  
Sunita Kukreti ◽  
P. C. Mathur

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