High Temperature Electrical Properties of Co-Substituted La4BaCu5O13+δ Thin Films Fabricated by Sputtering Method

The high-temperature conductivity of the perovskite oxides of a La4BaCu5O13+δ (LBCO) thin film prepared by RF sputtering deposition and thermal annealing has been studied. While the bulk LBCO compound was metallic, the LBCO film deposited on a Si substrate by sputtering and a post annealing process showed semiconductor-like conduction, which is considered to be due to the defects and poor grain connectivity in the LBCO film on the Si substrate. The LBCO film deposited on a SrTiO3 substrate was of high film quality and showed metallic conduction. When the cation site Cu was substituted by Co, the electrical conductivity of the LBCO film increased further and its temperature dependence became smaller. The transport properties of LBCO films are investigated to understand its carrier generation mechanism.

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects

Ferroelectric topological objects provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels associated with the topological cores of quadrant vortex domain and center domain (monopole-like) states confined in high quality BiFeO3 nanoislands, abbreviated as the vortex core and the center core. We unveil via the phase-field simulation that the superfine metallic conduction channels along the center cores arise from the screening charge carriers confined at the core region, whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be reversibly created and deleted by manipulating the two topological states via electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices, e.g. nonvolatile memory.

Simultaneous manifestation of metallic conductivity and single-molecule magnetism in a layered molecule-based compound

A metallic single-molecule magnet was synthesised demonstrating simultaneous metallic conduction and excellent SMM properties at the same temperature range for the first time, with potential applications in molecule-based quantum spintronics.

Crystal structure and metallization mechanism of the π-radical metal TED

The molecular arrangement that enables metallic conduction in a single-component pure organic crystal is revealed by single-crystal X-ray diffraction.

Proximity-Induced Superconducting States of Magnetically Doped 3D Topological Insulators with High Bulk Insulation

We studied magnetized topological insulator/superconductor junctions with the expectation of unconventional superconductive states holding Majorana fermions induced by superconductive proximity effects on the surface states of magnetized topological insulators (TIs), attached by conventional superconductors. We introduced Fe-doped BiSbTe2Se as an ideal magnetic TI and used the developed junction fabrication process to access the proximity-induced surface superconducting states. The bulk single crystals of the Fe-doped TI showed excellent bulk-insulating properties and ferromagnetism simultaneously at a low temperature. Meanwhile, the fabricated junctions also showed an insulating behavior above 100 K, as well as metallic conduction at a low temperature, which reflects bulk carrier freezing. In addition, we observed a proximity-induced gap structure in the conductance spectra. These results indicate that the junctions using the established materials and process are preferable to observe unconventional superconducting states which are induced via the surface channels of the magnetized TI. We believe that the developed process can be applied for the fabrication of complicated junctions and suites for braiding operations.