Non-Tomonaga-Luttinger-Liquid Behavior of the Ground State of Model One-Dimensional Electron Systems

1993 ◽  
Vol 62 (9) ◽  
pp. 2990-2993 ◽  
Author(s):  
Daijiro Yoshioka ◽  
Masao Ogata
1998 ◽  
Vol 57 (23) ◽  
pp. 14869-14876 ◽  
Author(s):  
Daniele Agosti ◽  
Francesco Pederiva ◽  
Enrico Lipparini ◽  
Kazuo Takayanagi

2004 ◽  
Vol 22 (1-3) ◽  
pp. 729-732 ◽  
Author(s):  
M.A Wilde ◽  
J.I Springborn ◽  
Ch Heyn ◽  
D Heitmann ◽  
D Grundler

1998 ◽  
Vol 249-251 ◽  
pp. 175-179
Author(s):  
B. Kardynal ◽  
C.H.W. Barnes ◽  
E.H. Linfield ◽  
D.A. Ritchie ◽  
J.T. Nicholls ◽  
...  

2013 ◽  
Vol 8 (8) ◽  
pp. 569-574 ◽  
Author(s):  
J. Waissman ◽  
M. Honig ◽  
S. Pecker ◽  
A. Benyamini ◽  
A. Hamo ◽  
...  

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 489-493
Author(s):  
H. Kosina ◽  
C. Troger

Nonparabolicity effects in two-dimensional electron systems are quantitatively analyzed. A formalism has been developed which allows to incorporate a nonparabolic bulk dispersion relation into the Schrödinger equation. As a consequence of nonparabolicity the wave functions depend on the in-plane momentum. Each subband is parametrized by its energy, effective mass and a subband nonparabolicity coefficient. The formalism is implemented in a one-dimensional Schrödinger-Poisson solver which is applicable both to silicon inversion layers and heterostructures.


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