Interband two-photon optical transitions are classified and expressions are obtained for the matrix elements in a narrow-gap semiconductor depending on the band parameters, degree of polarization, and light frequency. It is shown that the main contribution to two-photon linear-circular dichroism in narrow-gap semiconductors is made by optical transitions proceeding from the subband of light holes to the conduction band.
The dependences of the partial coefficients of interband two-photon absorption of light, which differ from each other by the types of optical transitions, are analyzed depending on the degree of polarization of the light, and a quantitative analysis of the coefficient of linear-circular dichroism of two-photon absorption of light is carried out.
Expressions are obtained for the spectral dependence of the coefficient of interband two-photon absorption of light in narrow-gap semiconductors in the Kane model.
Soft x-ray absorption spectroscopy and magnetic circular dichroism as operando probes of complex oxide electrolyte gate transistors
