scholarly journals Study of Ni-Doping Effect of Specific Heat and Transport Properties for LaFe1-yNiyAsO0.89F0.11

2011 ◽  
Vol 80 (8) ◽  
pp. 084720 ◽  
Author(s):  
Takayuki Kawamata ◽  
Erika Satomi ◽  
Yoshiaki Kobayashi ◽  
Masayuki Itoh ◽  
Masatoshi Sato
Keyword(s):  
Specific Heat ◽  
Transport Properties ◽  
Doping Effect ◽  
Ni Doping

Sr doping effect on transport properties in PrBa2Cu3Oy and PrBa2Cu2.7Mo0.3Oy

2002 ◽  
Vol 15 (6) ◽  
pp. 859-863 ◽  
Author(s):  
C F Yang ◽  
L Wang ◽  
Y Zhao ◽  
H Zhang ◽  
S H Han
Keyword(s):  
Transport Properties ◽  
Doping Effect

SPECIFIC HEAT, MAGNETIC SUSCEPTIBILITY AND TRANSPORT PROPERTIES OF POLYCRYSTALLINE CelnAu AND CelnAu2

1987 ◽  
pp. 107-110
Author(s):  
H.R. PLEGER ◽  
E. BRüCK ◽  
E. BRAUN ◽  
F. OSTER ◽  
A. FREIMUTH ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Specific Heat ◽  
Transport Properties

The Effect of Be and Mn Co-Doping on the Magnetic and Transport Properties of Ferromagnetic Semiconductor Thin Films

2011 ◽  
Vol 239-242 ◽  
pp. 127-131
Author(s):  
Gang Xiang ◽  
Xi Zhang
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Transport Properties ◽  
Ferromagnetic Semiconductor ◽  
Doping Effect ◽  
Hall Resistance ◽  
Co Doping ◽  
Transport Studies ◽  
Semiconductor Thin Films ◽  
Curie Temperatures

The co-doping effect of Be and Mn have been studied in the ferromagnetic semiconductor (Ga,Mn)As thin films. The measurement of magnetic properties shows that the Be doping decreases the Curie temperatures of the ferromagnetic sample due to defects formation. The transport studies show that the Be incorporation decreases the resistivity of the (Ga,Mn)As thin films. It is found that Be incorporation decreases the planar Hall resistance but increases the resistance transitions in the magnetic samples.

Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys

1989 ◽  
Vol 149 ◽  
Author(s):  
Liyou Yang ◽  
A. Catalano ◽  
R. R. Arya ◽  
M. S. Bennett ◽  
I. Balberg
Keyword(s):  
Light Intensity ◽  
Transport Properties ◽  
Diffusion Length ◽  
Boron Doping ◽  
Ambipolar Diffusion ◽  
Doping Effect ◽  
Intensity Dependence ◽  
Low Level

ABSTRACTLarge simultaneous changes in ambipolar diffusion length and d.c. photoconductivity are observed with boron doping below 5ppm. We show that the observation can be explained successfully with a model for the doping effect, which is also consistent with earlier studies. The μτ products for both carriers as a function of doping are determined. The light intensity dependence of diffusion length and photoconductivity is also discussed.

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