(Invited) Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors

2014 ◽  
Vol 61 (4) ◽  
pp. 171-177 ◽  
Author(s):  
A. Yadav ◽  
C. Schwarz ◽  
M. Shatkhin ◽  
L. Wang ◽  
E. Flitsiyan ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electron Mobility ◽  
Carrier Transport ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gamma Irradiated ◽  
Carrier Transport Properties

Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

2016 ◽  
Vol 171 (3-4) ◽  
pp. 223-230 ◽  
Author(s):  
Anupama Yadav ◽  
Cameron Glasscock ◽  
Elena Flitsiyan ◽  
Leonid Chernyak ◽  
Igor Lubomirsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gamma Irradiated
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