Macroscopic Uniformity of Oxygen Concentration in Czochralski Silicon Crystals Closely Related to Evaporation of SiO from the Free Surface of Melts

2003 ◽  
Vol 150 (5) ◽  
pp. G319 ◽  
Author(s):  
Susumu Maeda ◽  
Kazutaka Terashima
Keyword(s):  
Free Surface ◽  
Oxygen Concentration ◽  
Czochralski Silicon ◽  
Silicon Crystals

Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czochralski Silicon Crystals

1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 5725-5730 ◽  
Author(s):  
Shigeru Umeno ◽  
Yoshio Yanase ◽  
Masataka Hourai ◽  
Masakazu Sano ◽  
Yoshiaki Shida ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Defect Behavior

Correlation of Oxygen and Recombination Centers on a Microscale in Asgrown Czochralski Silicon Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
K. Nauka ◽  
H. C. Gatos ◽  
J. Lagowski
Keyword(s):  
Oxygen Concentration ◽  
Carrier Lifetime ◽  
Growth Direction ◽  
Interstitial Oxygen ◽  
Czochralski Silicon ◽  
Laser Absorption ◽  
Silicon Crystals ◽  
Recombination Centers ◽  
Oxygen Precipitates ◽  
Absorption Technique

ABSTRACTQuantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime, with a spacial resolution of about 20 μm, were obtained in as-grown dislocationfree CZ-Si crystals employing a double laser absorption technique. It was found that maxima (minima) in oxygen concentration along the crystal growth direction coincide with minima (maxima) of the lifetime. It was further found that the relation between changes in oxygen concentration and in lifetime varies in the radial direction indicating that “as-grown” oxygen precipitates are involved in lifetime limiting processes.

Oxygen concentration in Czochralski silicon crystals depending on silicon monoxide evaporation from boron doped silicon melts

1998 ◽  
Vol 192 (1-2) ◽  
pp. 117-124 ◽  
Author(s):  
Susumu Maeda ◽  
Keisei Abe ◽  
Masaki Kato ◽  
Hideo Nakanishi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Silicon Monoxide ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen‐induced recombination centers in as‐grown Czochralski silicon crystals

1983 ◽  
Vol 43 (3) ◽  
pp. 241-243 ◽  
Author(s):  
K. Nauka ◽  
H. C. Gatos ◽  
J. Lagowski
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Recombination Centers

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Control of carbon in Czochralski silicon crystals

1983 ◽  
Vol 63 (1) ◽  
pp. 219-221 ◽  
Author(s):  
R.W. Series ◽  
K.G. Barraclough
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals
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