Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing

2004 ◽  
Vol 151 (2) ◽  
pp. G136 ◽  
Author(s):  
J. Stoemenos ◽  
D. Panknin ◽  
M. Eickhoff ◽  
V. Heera ◽  
W. Skorupa
Keyword(s):  
2004 ◽  
Vol 457-460 ◽  
pp. 351-354 ◽  
Author(s):  
Efstathios K. Polychroniadis ◽  
J. Stoemenos ◽  
Gabriel Ferro ◽  
Yves Monteil ◽  
D. Panknin ◽  
...  

2020 ◽  
Vol 56 (6) ◽  
pp. 577-582 ◽  
Author(s):  
V. M. Ievlev ◽  
A. I. Dontsov ◽  
A. S. Prizhimov ◽  
O. V. Serbin ◽  
N. R. Roshan ◽  
...  

2009 ◽  
Vol 45 (8) ◽  
pp. 873-879 ◽  
Author(s):  
O. K. Belousov ◽  
V. V. Vavilova ◽  
V. M. Ievlev ◽  
Yu. E. Kalinin ◽  
S. B. Kushchev ◽  
...  

2005 ◽  
Vol 483-485 ◽  
pp. 213-216 ◽  
Author(s):  
Jörg Pezoldt ◽  
Efstathios K. Polychroniadis ◽  
Thomas Stauden ◽  
Gernot Ecke ◽  
Thierry Chassagne ◽  
...  

The influence of the different additions to the melt on the nucleation behavior during short time flash lamp processing was investigated. It was observed that germanium and carbon additions to the silicone melt led to an increase of the mass transport to the growing surface and to an increase of the nuclei size. In the case of germanium additions to the silicon melt an incorporation of germanium in the silicon substrate was observed.


2009 ◽  
Vol 45 (7) ◽  
pp. 773-776 ◽  
Author(s):  
V. M. Ievlev ◽  
S. V. Kannykin ◽  
V. V. Kolos ◽  
S. B. Kushchev ◽  
M. I. Markevich ◽  
...  
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2005 ◽  
Vol 277 (1-4) ◽  
pp. 162-169 ◽  
Author(s):  
M. Smith ◽  
R.A. McMahon ◽  
M. Voelskow ◽  
W. Skorupa ◽  
J. Stoemenos

2004 ◽  
Vol 96 (9) ◽  
pp. 4843-4851 ◽  
Author(s):  
M. Smith ◽  
R. A. McMahon ◽  
M. Voelskow ◽  
W. Skorupa

2004 ◽  
Vol 457-460 ◽  
pp. 313-316 ◽  
Author(s):  
Gabriel Ferro ◽  
D. Panknin ◽  
J. Stoemenos ◽  
Carole Balloud ◽  
Jean Camassel ◽  
...  
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