Nanocrystallization in amorphous Al83Ni10La7 and Al83.5Ni9.5La5.6 Si1.4 alloys during thermal annealing and flash lamp processing

The influence of the different additions to the melt on the nucleation behavior during short time flash lamp processing was investigated. It was observed that germanium and carbon additions to the silicone melt led to an increase of the mass transport to the growing surface and to an increase of the nuclei size. In the case of germanium additions to the silicon melt an incorporation of germanium in the silicon substrate was observed.

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Preparation of TiSi2 via flash lamp processing of TiN/Ti/Si heterostructures

Inorganic Materials ◽

10.1134/s0020168509070127 ◽

2009 ◽

Vol 45 (7) ◽

pp. 773-776 ◽

Cited By ~ 1

Author(s):

V. M. Ievlev ◽

S. V. Kannykin ◽

V. V. Kolos ◽

S. B. Kushchev ◽

M. I. Markevich ◽

...

Keyword(s):

Flash Lamp ◽

Lamp Processing

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Regrowth mechanisms in flash lamp processing of heteroepitaxial SiC on silicon substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.02.008 ◽

2005 ◽

Vol 277 (1-4) ◽

pp. 162-169 ◽

Cited By ~ 6

Author(s):

M. Smith ◽

R.A. McMahon ◽

M. Voelskow ◽

W. Skorupa ◽

J. Stoemenos

Keyword(s):

Flash Lamp ◽

Silicon Substrates ◽

Lamp Processing

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Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

Journal of Applied Physics ◽

10.1063/1.1786650 ◽

2004 ◽

Vol 96 (9) ◽

pp. 4843-4851 ◽

Cited By ~ 34

Author(s):

M. Smith ◽

R. A. McMahon ◽

M. Voelskow ◽

W. Skorupa

Keyword(s):

Flash Lamp ◽

Silicon Heterostructures ◽

Lamp Processing

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Annealing Of Radiation Damage in Tungsten

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069053 ◽

1970 ◽

Vol 28 ◽

pp. 412-413

Author(s):

Robert C. Rau ◽

John Moteff

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Radiation Damage ◽

Thermal Annealing ◽

Neutron Fluence ◽

Dislocation Loops ◽

Defect Clusters ◽

Polycrystalline Tungsten ◽

Transmission Electron ◽

Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

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