Preparation of TiSi2 via flash lamp processing of TiN/Ti/Si heterostructures

2009 ◽  
Vol 45 (7) ◽  
pp. 773-776 ◽  
Author(s):  
V. M. Ievlev ◽  
S. V. Kannykin ◽  
V. V. Kolos ◽  
S. B. Kushchev ◽  
M. I. Markevich ◽  
...  
Keyword(s):  
Flash Lamp ◽  
Lamp Processing

Flash Lamp Processing-Activated Structural Transformations in Foil of a Pd–Cu Solid Solution

2020 ◽  
Vol 56 (6) ◽  
pp. 577-582 ◽  
Author(s):  
V. M. Ievlev ◽  
A. I. Dontsov ◽  
A. S. Prizhimov ◽  
O. V. Serbin ◽  
N. R. Roshan ◽  
...  
Keyword(s):  
Solid Solution ◽  
Structural Transformations ◽  
Flash Lamp ◽  
Lamp Processing

Nanocrystallization in amorphous Al83Ni10La7 and Al83.5Ni9.5La5.6 Si1.4 alloys during thermal annealing and flash lamp processing

2009 ◽  
Vol 45 (8) ◽  
pp. 873-879 ◽  
Author(s):  
O. K. Belousov ◽  
V. V. Vavilova ◽  
V. M. Ievlev ◽  
Yu. E. Kalinin ◽  
S. B. Kushchev ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Flash Lamp ◽  
Lamp Processing

Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing

2004 ◽  
Vol 151 (2) ◽  
pp. G136 ◽  
Author(s):  
J. Stoemenos ◽  
D. Panknin ◽  
M. Eickhoff ◽  
V. Heera ◽  
W. Skorupa
Keyword(s):  
Flash Lamp ◽  
Sic Films ◽  
Lamp Processing

Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt Modification

2005 ◽  
Vol 483-485 ◽  
pp. 213-216 ◽  
Author(s):  
Jörg Pezoldt ◽  
Efstathios K. Polychroniadis ◽  
Thomas Stauden ◽  
Gernot Ecke ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Mass Transport ◽  
Liquid Phase Epitaxy ◽  
Silicon Substrate ◽  
Flash Lamp ◽  
Nucleation Behavior ◽  
Silicon Melt ◽  
Short Time ◽  
Carbon Additions ◽  
Lamp Processing

The influence of the different additions to the melt on the nucleation behavior during short time flash lamp processing was investigated. It was observed that germanium and carbon additions to the silicone melt led to an increase of the mass transport to the growing surface and to an increase of the nuclei size. In the case of germanium additions to the silicon melt an incorporation of germanium in the silicon substrate was observed.

Regrowth mechanisms in flash lamp processing of heteroepitaxial SiC on silicon substrates

2005 ◽  
Vol 277 (1-4) ◽  
pp. 162-169 ◽  
Author(s):  
M. Smith ◽  
R.A. McMahon ◽  
M. Voelskow ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Flash Lamp ◽  
Silicon Substrates ◽  
Lamp Processing

Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

2004 ◽  
Vol 96 (9) ◽  
pp. 4843-4851 ◽  
Author(s):  
M. Smith ◽  
R. A. McMahon ◽  
M. Voelskow ◽  
W. Skorupa
Keyword(s):  
Flash Lamp ◽  
Silicon Heterostructures ◽  
Lamp Processing

scholarly journals Equivalent impedance of Xenon Flash Lamp

1984 ◽  
Vol 68 (Appendix) ◽  
pp. 45-46
Author(s):  
Hiromitsu Ishii ◽  
Kiyoshi Iida ◽  
Norio Muroi
Keyword(s):  
Flash Lamp ◽  
Xenon Flash Lamp ◽  
Equivalent Impedance ◽  
Xenon Flash
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