Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

1992 ◽  
Vol 139 (7) ◽  
pp. 1983-1988 ◽  
Author(s):  
Naoki Kasai ◽  
Nobuhiro Endo
Sign in / Sign up

Export Citation Format

Share Document