Chemical Etching of Thermally Oxidized Silicon Nitride: Comparison of Wet and Dry Etching Methods

1991 ◽  
Vol 138 (5) ◽  
pp. 1389-1394 ◽  
Author(s):  
Lee M. Loewenstein ◽  
Charlotte M. Tipton
Keyword(s):  
Silicon Nitride ◽  
Chemical Etching ◽  
Dry Etching

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

2007 ◽  
Vol 25 (4) ◽  
pp. 980-985 ◽  
Author(s):  
Y. B. Yun ◽  
S. M. Park ◽  
D. J. Kim ◽  
N.-E. Lee ◽  
K. S. Kim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Dry Etching ◽  
Silicon Oxynitride ◽  
Oxide Layers ◽  
Injection Methods

scholarly journals Novel fabrication of fixed suspended silicon nitride structure for MEMS devices with dry etching

2020 ◽  
Vol 872 ◽  
pp. 012157
Author(s):  
Khawaja Nizammuddin Subhani ◽  
Shubham Khandare ◽  
R C Biradar ◽  
K N Bhat
Keyword(s):  
Silicon Nitride ◽  
Dry Etching ◽  
Mems Devices

Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication

2015 ◽  
Vol 54 (4) ◽  
pp. 042003 ◽  
Author(s):  
Xiuyu Zhang ◽  
Yuji Togano ◽  
Kentaro Hashimura ◽  
Masato Morifuji ◽  
Masahiko Kondow
Keyword(s):  
Photonic Crystal ◽  
Silicon Nitride ◽  
Dry Etching

Patterning of porous silicon nanostructures and eliminating microcracks on silicon nitride mask using metal assisted chemical etching

2012 ◽  
Vol 520 (6) ◽  
pp. 2080-2084 ◽  
Author(s):  
Mohammad Zahedinejad ◽  
Mahdi khaje ◽  
Alireza Erfanian ◽  
Farshid Raissi ◽  
Hamed Mehrara ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Porous Silicon ◽  
Chemical Etching ◽  
Silicon Nanostructures ◽  
Metal Assisted Chemical Etching

Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching

2015 ◽  
Vol 212 (10) ◽  
pp. 2341-2344 ◽  
Author(s):  
Wanyong Li ◽  
Yi Luo ◽  
Bing Xiong ◽  
Changzheng Sun ◽  
Lai Wang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Dry Etching ◽  
Ridge Waveguides ◽  
Wet Chemical ◽  
Wet Chemical Etching

Improving the resistance of PECVD silicon nitride to dry etching using an oxygen plasma

1997 ◽  
Vol 35 (1-4) ◽  
pp. 41-44 ◽  
Author(s):  
S.E. Hicks ◽  
S.K. Murad ◽  
I. Sturrock ◽  
C.D.W. Wilkinson
Keyword(s):  
Silicon Nitride ◽  
Oxygen Plasma ◽  
Dry Etching

scholarly journals Исследование влияния атомарного состава на скорость плазмохимического травления нитрида кремния в силовых транзисторах на основе AlGaN/GaN-гетероперехода

2020 ◽  
Vol 54 (8) ◽  
pp. 748
Author(s):  
В.И. Гармаш ◽  
В.Е. Земляков ◽  
В.И. Егоркин ◽  
А.В. Ковальчук ◽  
С.Ю. Шаповал
Keyword(s):  
Silicon Nitride ◽  
Chemical Etching ◽  
Etching Rate ◽  
Plasma Generator ◽  
Hydrogen Impurity ◽  
Plasma Chemical ◽  
Working Pressure ◽  
Power Transistors ◽  
Impurity Atoms ◽  
Plasma Chemical Etching

The effect of atomic composition on the rate of plasma chemical etching of silicon nitride in power transistors based on an AlGaN / GaN heterojunction is studied. It is shown how the subsequent process of its plasma-chemical etching depends on the configuration of the incorporation of hydrogen impurity atoms into the molecular structure of the silicon nitride deposited in the plasma. The dependence of the etching rate on the parameters of the process (the working pressure in the chamber, the power of the plasma generator, the flow of working gases, the deposition temperature) is investigated. It was shown that the etching rate of the HxSirNzHy film does not depend directly on the hydrogen content, but significantly depends on the ratio of [Si-H] / [N-H] bonds. The etching rate of HxSirNzHy in a high-density plasma at low powers is much less dependent on the configuration of hydrogen bonds than the etching rate of this dielectric in a buffer etchant.

Investigation of the Effect of Atomic Composition on the Plasma-Chemical Etching Rate of Silicon Nitride in High-Power Transistors Based on an AlGaN/GaN Heterojunction

2020 ◽  
Vol 54 (8) ◽  
pp. 895-899
Author(s):  
V. I. Garmash ◽  
V. E. Zemlyakov ◽  
V. I. Egorkin ◽  
A. V. Kovalchuk ◽  
S. Y. Shapoval
Keyword(s):  
Silicon Nitride ◽  
High Power ◽  
Chemical Etching ◽  
Etching Rate ◽  
Atomic Composition ◽  
Plasma Chemical ◽  
Power Transistors ◽  
Plasma Chemical Etching

High Selectivity in Dry Etching of Silicon Nitride over Si Using a Novel Hydrofluorocarbon Etch Gas in a Microwave Excited Plasma for FinFET

2014 ◽  
Vol 61 (3) ◽  
pp. 29-37 ◽  
Author(s):  
Y. Nakao ◽  
T. Matsuo ◽  
A. Teramoto ◽  
H. Utsumi ◽  
K. Hashimoto ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
High Selectivity ◽  
Dry Etching
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