Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

2007 ◽  
Vol 25 (4) ◽  
pp. 980-985 ◽  
Author(s):  
Y. B. Yun ◽  
S. M. Park ◽  
D. J. Kim ◽  
N.-E. Lee ◽  
K. S. Kim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Dry Etching ◽  
Silicon Oxynitride ◽  
Oxide Layers ◽  
Injection Methods

Role of N2 during chemical dry etching of silicon oxide layers using NF3/N2/Ar remote plasmas

2007 ◽  
Vol 84 (4) ◽  
pp. 560-566 ◽  
Author(s):  
D.J. Kim ◽  
Y.B. Yun ◽  
J.Y. Hwang ◽  
N.-E. Lee ◽  
K.S. Kim ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Dry Etching ◽  
Oxide Layers

Effects of N2 addition on chemical dry etching of silicon oxide layers in F2∕N2∕Ar remote plasmas

2006 ◽  
Vol 24 (4) ◽  
pp. 1380-1385 ◽  
Author(s):  
J. Y. Hwang ◽  
D. J. Kim ◽  
N.-E. Lee ◽  
Y. C. Jang ◽  
G. H. Bae
Keyword(s):  
Silicon Oxide ◽  
Dry Etching ◽  
Oxide Layers

Conductance transient comparative analysis of ECR-PECVD deposited SiNx, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

2003 ◽  
Vol 786 ◽  
Author(s):  
H. Castán ◽  
S. Dueñas ◽  
J. Barbolla ◽  
A. Del Prado ◽  
E. San Andrés ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Chemical Vapour ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Mis Capacitors

ABSTRACTA study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiOxNy films deposited on silicon by electron cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) is presented. Interface trap densities measured by deep level transient spectroscopy (DLTS) are higher for silicon oxynitride-based MIS capacitors than for silicon nitride and silicon oxide-silicon nitride-based ones. However, conductance transient analysis demonstrated that Al/SiNx/Si devices exhibit the highest disordered-induced gap states (DIGS) density, whereas the lowest one corresponds to Al/SiNx/SiO2/Si, and silicon oynitride-based MIS capacitors show an intermediate behaviour. In addition, thermal treatments applied to Al/SiOxNy/Si samples reduce DIGS densities to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.

Characterization of Europium Doped Silicon Oxide, Silicon Oxynitride, and Silicon Nitride Films Prepared By Integrated Ecr-PECVD and Magnetron Sputtering

2020 ◽  
Vol MA2020-01 (52) ◽  
pp. 2934-2934
Author(s):  
Fahmida Azmi ◽  
Yuxuan Gao ◽  
Zahra Khatami ◽  
Peter Mascher
Keyword(s):  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Silicon Oxide ◽  
Silicon Oxynitride ◽  
Silicon Nitride Films ◽  
Doped Silicon

Realization of Silicon Nitride Template for Nanoimprint: A First Result

2007 ◽  
Vol 121-123 ◽  
pp. 669-672 ◽  
Author(s):  
Ze Wen Liu ◽  
Tian Ruo Zhang ◽  
Li Tian Liu ◽  
Zhi Jian Li
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Silicon Wafer ◽  
Silicon Oxide ◽  
Dry Etching ◽  
Wet Etching ◽  
Etching Method ◽  
Etching Mask ◽  
P Type

A first result of realization of silicon nitride templates on 100mm silicon wafer as nanoinprint mold using simple wet etching method is reported in this paper. The process is based on traditional photolithograph and following buffer HF wet etching, which started from a p-type wafer with 400nm thermal silicon oxide, 200nm PECVD silicon nitride and 400nm PECVD silicon oxide sandwich layer. After patterning with lithography, the patterned resist is used as mask for the isotropic underlayer wet etching of silicon dioxide with buffer HF solution. Using the obtained nanosacle silicon dioxide lines as RIE dry etching mask, silicon nitride template of 100nm width with steep sidewalls is successfully realized.

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

scholarly journals A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Comparison Study

Chemical Etching of Thermally Oxidized Silicon Nitride: Comparison of Wet and Dry Etching Methods

1991 ◽  
Vol 138 (5) ◽  
pp. 1389-1394 ◽  
Author(s):  
Lee M. Loewenstein ◽  
Charlotte M. Tipton
Keyword(s):  
Silicon Nitride ◽  
Chemical Etching ◽  
Dry Etching

Changes in the optical properties of films of silicon nitride, silicon oxinitride, and silicon oxide upon ion irradiation

1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin
Keyword(s):  
Optical Properties ◽  
Silicon Nitride ◽  
Silicon Oxide ◽  
Ion Irradiation

Influence of thin interfacial silicon oxide layers on the Schottky-barrier behavior of Ti on Si(100)

1989 ◽  
Vol 39 (8) ◽  
pp. 5070-5078 ◽  
Author(s):  
M. O. Aboelfotoh
Keyword(s):  
Schottky Barrier ◽  
Silicon Oxide ◽  
Oxide Layers
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