ABSTRACTDeposition of amorphous germanium by anodic PCVD was performed changing the germane/hydrogen dilution ratio from 1/6 to 1/100. Films deposited under high dilution of germane are of a high mechanical density (92.5 % of bulk) and good optoelectronic properties (electrical conductivity at room temperature σ=10−5 (Ω cm)−1, majority carrier mobility-lifetime product at λ=1200 nm ημ=x 10−7 cm2/V). The quality of the films is increased by deposition at increasing pumping speed for hydrogen (lower hydrogen pressure) keeping the other parameters constant. It is suggested that fast atomic hydrogen originating from a backscattering process at the powered electrode bombard the growing film and contribute to the improved quality of the a-Ge:H. Also, the growth kinetics of the films is changed from linear to parabolic dependence on germane flow interchanging deposition from high to low hydrogen pressure. This effect is rationalized in terms of a contribution of energetic atomic hydrogen to the dissociation of germane.