Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAs

1971 ◽  
Vol 118 (11) ◽  
pp. 1823 ◽  
Author(s):  
J. V. DiLorenzo ◽  
G. E. Moore
Keyword(s):  
Mole Fraction ◽  
Epitaxial Layers ◽  
Germanium Silicon

Incorporation of boron into UHV/CVD-grown germanium-silicon epitaxial layers

1992 ◽  
Vol 21 (6) ◽  
pp. 593-597 ◽  
Author(s):  
D. W. Greve ◽  
Marco Racanelli
Keyword(s):  
Epitaxial Layers ◽  
Germanium Silicon

The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE

1996 ◽  
Vol 449 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Masaya Shimizu ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Mole Fraction ◽  
Vapor Phase ◽  
Growth Stage ◽  
Lattice Mismatch ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
Epitaxial Layers ◽  
Initial Growth ◽  
Initial Growth Stage

ABSTRACTInGaN has been grown on GaN and AlGaN epitaxial layers by metalorganic vapor phase epitaxy (MOVPE) and ‘the composition pulling effect’ at the initial growth stage of InGaN has been studied in relation to the lattice mismatch between InGaN and the bottom epitaxial layers. Crystalline quality of InGaN is good near the interface of InGaN/GaN and the composition of InGaN is close to that of GaN. With increasing growth thickness, the crystalline quality becomes worse and the indium mole fraction is increased. The composition pulling effect becomes stronger with increasing lattice mismatch.

scholarly journals Optical Properties of Nitride-based Structures Grown on 6H-SiC

1996 ◽  
Vol 1 ◽  
Author(s):  
D.V. Tsvetkov ◽  
A.S. Zubrilov ◽  
V. I. Nikolaev ◽  
V.A. Soloviev ◽  
V.A. Dmitriev
Keyword(s):  
Optical Properties ◽  
Linear Function ◽  
Mole Fraction ◽  
Luminescent Properties ◽  
Blue Shift ◽  
Peak Position ◽  
Epitaxial Layers ◽  
Forward Current ◽  
Double Heterostructures ◽  
Effects Of Temperature

The luminescent properties of AlGaN epitaxial layers with AlN mole fractions up to 30% and various types of AlGaN/GaN-based heterostructures have been studied. The structures were grown on 6H-SiC substrates by MOCVD. The structures' cathodoluminescence and electroluminescence were measured. A “blue” shift of the edge luminescent peak position for AlGaN alloys was measured to be a non-linear function on the AlN mole fraction. For p-AlGaN/n-GaN double heterostructures (DH), the edge peak position was detected at 365 nm (300K). For a p-Al0.05Ga0.95N/n-Al0.03Ga0.97N heterostructure, the electroluminescent edge peak was observed at 355 nm (300K). The effects of temperature and forward current on the edge electroluminescence of theAlGaN/GaN DH's were investigated.

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Temperature and concentration dependence of equivalent conductivity in Ca(NO3)2-CaI2-H2O system

1980 ◽  
Vol 45 (6) ◽  
pp. 1639-1645 ◽  
Author(s):  
Jindřich Novák ◽  
Ivo Sláma
Keyword(s):  
Linear Function ◽  
Concentration Dependence ◽  
Mole Fraction ◽  
Constant Temperature ◽  
Salt Concentration ◽  
Free Water ◽  
Water Molecules ◽  
Equivalent Conductivity ◽  
Calcium Salts ◽  
Fraction I

The dependence of the equivalent conductivity on the temperature and composition of the Ca(NO3)2-CaI2-H2O system was studied. The ionic fraction [I-]/([I-] + [NO-3]) was changed from 0.1 to 0.5, the mole fraction of calcium salts (assumed in anhydrous form in the presence of free water molecules) was 0.075-0.200. The equivalent conductivity was found to be a linear function of the ionic fraction at constant temperature and salt concentration.

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Formation of spiro adduct from N-methyl-N-(2,4,6-trinitrophenyl)glycine anion

1989 ◽  
Vol 54 (2) ◽  
pp. 440-445 ◽  
Author(s):  
Vladimír Macháček ◽  
Alexandr Čegan ◽  
Miloš Sedlák ◽  
Vojeslav Štěrba
Keyword(s):  
Nmr Spectroscopy ◽  
Dimethyl Sulfoxide ◽  
Equilibrium Constant ◽  
Mole Fraction ◽  
Nucleophilic Addition ◽  
Adduct Formation ◽  
First Case ◽  
C Nmr

The intramolecular nucleophilic addition of N-methyl-N-(2,4,6-trinitrophenyl)glycine anion in methanol-dimethyl sulfoxide mixtures produces spiro[(3-methyl-5-oxazolidinone)-2,1'-(2',4',6'-trinitrobenzenide)]. The spiro adduct has been identified by means of 1H and 13C NMR spectroscopy. This is the first case when the formation of a Meisenheimer adduct with carboxylate ion is observed. Logarithm of the equilibrium constant of adduct formation increases linearly with the mole fraction of dimethyl sulfoxide in its mixture with methanol.

Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects

2021 ◽  
Vol 560-561 ◽  
pp. 126033
Author(s):  
J. Erlekampf ◽  
M. Rommel ◽  
K. Rosshirt-Lilla ◽  
B. Kallinger ◽  
P. Berwian ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Influence Of Substrate
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