Physical and Dielectric Properties of the Metal-Silicon Dioxide-Silicon System

1962 ◽  
Vol 109 (2) ◽  
pp. 94 ◽  
Author(s):  
J. L. Sprague ◽  
J. A. Minahan ◽  
O. J. Wied
Keyword(s):  
Dielectric Properties ◽  
Silicon Dioxide ◽  
Silicon System

Dielectric Properties of Styrene—Butadiene Rubber/Silicon Dioxide Mixtures

1973 ◽  
Vol 5 (2) ◽  
pp. 83-90 ◽  
Author(s):  
Faika F. Hanna ◽  
Abbas A. Yehia ◽  
Abdel-Fattah Abou-Bakr
Keyword(s):  
Dielectric Properties ◽  
Silicon Dioxide ◽  
Styrene Butadiene Rubber ◽  
Butadiene Rubber ◽  
Styrene Butadiene

Improvement in dielectric properties of low temperature PECVD silicon dioxide by reaction with hydrazine

1995 ◽  
Vol 24 (6) ◽  
pp. 751-755 ◽  
Author(s):  
K. W. Vogt ◽  
M. Houston ◽  
M. F. Ceiler ◽  
C. E. Roberts ◽  
P. A. Kohl
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Silicon Dioxide

Dielectric properties of silicon dioxide/wood composite

2007 ◽  
Vol 41 (6) ◽  
pp. 511-522 ◽  
Author(s):  
Yunlin Fu ◽  
Guangjie Zhao
Keyword(s):  
Dielectric Properties ◽  
Silicon Dioxide ◽  
Wood Composite

Sintering, Microstructure and Dielectric Properties of Ca-Al-B-Si-O Glass/Al2O3 Composites with Various SiO2 Content

2011 ◽  
Vol 130-134 ◽  
pp. 1516-1519
Author(s):  
Ming Liu ◽  
Hong Qing Zhou ◽  
Hai Kui Zhu ◽  
Min Liu ◽  
Jian Xin Zhao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Silicon Dioxide ◽  
Bulk Density ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric ◽  
Tan Δ ◽  
Silicon Dioxide Content

The effects of silicon dioxide addition on the sintering, microstructure and microwave dielectric properties of Ca-Al-B-Si-O glass/Al2O3 composites were investigated. Results show that: Increasing the silicon dioxide content in the glass leads to the corresponding rise of bulk density, dielectric constant of the LTCC materials and the decrease of its dielectric loss and porosity. A bulk density of 2.92 g·cm-3, a porosity of 0.2%, aεr value of 7.11 and a tan δ value of 0.00096(measured at 10 MHz) are obtained for 68 wt% silicon dioxide of the samples sintered at 875°C for 30 min.

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