Effect of Ion-Irradiation on Silicide Formation in Metal-Silicon System with Interfacial Silicon Dioxide Layer

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

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EFM Study on Ge Island: Carrier Charge and Storage Effect

MRS Proceedings ◽

10.1557/proc-1260-t10-44 ◽

2010 ◽

Vol 1260 ◽

Author(s):

Zhen Lin ◽

Pavel Brunkov ◽

Xueying Ma ◽

Franck Bassani ◽

Georges Bremond

Keyword(s):

Silicon Dioxide ◽

Electrostatic Force ◽

Storage Effect ◽

Silicon Dioxide Layer ◽

Conductive Material ◽

Doped Silicon ◽

Charge Decay ◽

Memory Applications ◽

Carrier Charge ◽

And Storage

AbstractIn this paper, individual Ge nano island on top of a silicon dioxide layer of thermally grown on a n+ type doped silicon (001) substrate have been studied. The charging ability of an individual Ge island was evaluated by EFM two-pass lift mode measurement. Such Ge nano island becomes an iso-potential and behaves as a conductive material after being charged. These charges were directly injected and were trapped homogenous in the isolated Ge island. It is also shown that the dominant charge decay mechanism during discharging of nc-Ge is related to the leakage of these trapped charges. Further more, the retention time of these trapped charges was evaluated and the electrostatic force was also studied by using different tip bias during scan. Such a study should be very useful to the Ge-nc in memory applications.

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Influence of the Silicon Dioxide Layer Thickness on Electroforming in Open TiN–SiO2–W Sandwiches

Technical Physics ◽

10.1134/s106378421811018x ◽

2018 ◽

Vol 63 (11) ◽

pp. 1629-1635 ◽

Cited By ~ 2

Author(s):

V. M. Mordvintsev ◽

S. E. Kudryavtsev ◽

V. L. Levin

Keyword(s):

Silicon Dioxide ◽

Layer Thickness ◽

Silicon Dioxide Layer

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Effect of Nitrogen and Oxygen Impurities on Tantalum Silicide Formation

MRS Proceedings ◽

10.1557/proc-25-123 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 2

Author(s):

K. T. Ho ◽

C.-D. Lien ◽

M-A. Nicolet ◽

D. M. Scott

Keyword(s):

Nuclear Reaction ◽

Host Lattice ◽

Chemical Affinity ◽

Silicide Formation ◽

Silicide Layer ◽

Physical Effects ◽

Rare Isotopes ◽

Silicon System ◽

Tantalum Silicide ◽

Oxygen Impurities

ABSTRACTTantalum, being a refractory metal, is sensitive to ambient impurities when forming a silicide. By introducing nitrogen and oxygen impurities into a tantalum-silicon system, interesting chemical and physical effects are observed in their subsequent reactions. Nitrogen and oxygen behave similarly in such a system. If initially present in Ta, they segregate into the still unreacted Ta as the silicide layer grows at a somewhat retarded rate. The same impurities, initially present in Si, are immobile in the form of stable compouis and suppress TaSi2 growth. The rare isotopes 15N and 18O are introduced bY implantation and Profiled by 15N(P,α)12C and 18O(P,α)15N nuclear reaction analyses, respectively. In addition, unintentionally incorporated 18O is checked by the 16O(d,α) 14N nuclear reaction. The results are explained in terms of the moving species Si, and of the chemical affinity, solubility and diffusivity of the impurities in their host lattice.

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