Effect of oxidizing environments on the diffusion-segregation boron distribution in the thermal silicon dioxide-silicon system

Technical Physics ◽

10.1134/1.1576471 ◽

2003 ◽

Vol 48 (5) ◽

pp. 580-586 ◽

Author(s):

O. V. Aleksandrov ◽

N. N. Afonin

Keyword(s):

Silicon Dioxide ◽

Boron Distribution ◽

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Ripple formation in excimer laser-irradiated silicon dioxide/silicon system

10.1117/12.317950 ◽

1998 ◽

Author(s):

J. J. Yu ◽

Yongfeng Lu

Keyword(s):

Silicon Dioxide ◽

Excimer Laser ◽

Ripple Formation ◽

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Physical and Dielectric Properties of the Metal-Silicon Dioxide-Silicon System

Journal of The Electrochemical Society ◽

10.1149/1.2425364 ◽

1962 ◽

Vol 109 (2) ◽

pp. 94 ◽

Author(s):

J. L. Sprague ◽

J. A. Minahan ◽

O. J. Wied

Keyword(s):

Dielectric Properties ◽

Silicon Dioxide ◽

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Effect of Ion-Irradiation on Silicide Formation in Metal-Silicon System with Interfacial Silicon Dioxide Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.1218 ◽

1985 ◽

Vol 24 (Part 1, No. 9) ◽

pp. 1218-1223 ◽

Author(s):

Yuji Horino ◽

Noriaki Matsunami ◽

Noriaki Itoh

Keyword(s):

Silicon Dioxide ◽

Ion Irradiation ◽

Silicide Formation ◽

Silicon Dioxide Layer ◽

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Properties of the silicon dioxide-silicon system

Microelectronics Reliability ◽

10.1016/0026-2714(67)90321-6 ◽

1967 ◽

Vol 6 (3) ◽

pp. 251

Keyword(s):

Silicon Dioxide ◽

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ChemInform Abstract: SURFACE CHARGES IN A ZINC OXIDE-BORON OXIDE-SILICON DIOXIDE GLASS/SILICON SYSTEM

Chemischer Informationsdienst ◽

10.1002/chin.198423013 ◽

1984 ◽

Vol 15 (23) ◽

Author(s):

Y. MISAWA ◽

H. HACHINO ◽

S. HARA ◽

M. HANAZONO

Keyword(s):

Silicon Dioxide ◽

Boron Oxide ◽

Surface Charges ◽

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Determination of aluminum‐silicon dioxide and silicon‐silicon dioxide barrier heights in a metal‐tunnel insulator‐silicon system

Journal of Applied Physics ◽

10.1063/1.334523 ◽

1985 ◽

Vol 57 (4) ◽

pp. 1256-1260 ◽

Author(s):

A. K. Duong ◽

A. G. Nassibian

Keyword(s):

Silicon Dioxide ◽

Barrier Heights ◽

Silicon System ◽

Silicon Silicon ◽

Aluminum Silicon

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BORON DISTRIBUTION AT BOUNDARIES IN RAPIDLY SOLIDIFIED Ni3Al

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1986745 ◽

1986 ◽

Vol 47 (C7) ◽

pp. C7-263-C7-268

Author(s):

M. K. MILLER ◽

J. A. HORTON

Keyword(s):

Boron Distribution ◽

Rapidly Solidified

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Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.131.235 ◽

2011 ◽

Vol 131 (7) ◽

pp. 235-239 ◽

Author(s):

Kaoru Yamashita ◽

Tomoya Yoshizaki ◽

Minoru Noda ◽

Masanori Okuyama

Keyword(s):

Silicon Dioxide ◽

Sensitivity Enhancement

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INFLUENCE OF RAPID THERMAL TREATMENT OF INITIAL SILICON WAFERS ON THE ELECTROPHYSICAL PROPERTIES OF SILICON DIOXIDE OBTAINED BY PYROGENOUS OXIDATION

High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes ◽

10.1615/hightempmatproc.2019031122 ◽

2019 ◽

Vol 23 (3) ◽

pp. 283-290

Author(s):

Vladimir A. Pilipenko ◽

Vitaly A. Solodukha ◽

Anatoly Zharin ◽

Oleg Gusev ◽

Roman Vorobey ◽

...

Keyword(s):

Thermal Treatment ◽

Silicon Dioxide ◽

Silicon Wafers ◽

Electrophysical Properties ◽

Initial Silicon

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Embedded spectroscopic reflectometry metrology on FEOL silicon dioxide trench polishing equipment

2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) ◽

10.23919/mipro.2017.7966614 ◽

2017 ◽

Author(s):

S. Bourzgui ◽

A. Roussy ◽

J. Blue ◽

G. Georges ◽

E. Faivre ◽

...

Keyword(s):

Silicon Dioxide ◽

Spectroscopic Reflectometry

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