Impacts of Metal Impurities on Recombination Properties at Small Angle Grain Boundaries in Multicrystalline Silicon for Solar Cells

2019 ◽  
Vol 41 (4) ◽  
pp. 29-36 ◽  
Author(s):  
Takashi Sameshima ◽  
Yuki Tsuchiya ◽  
Naoto Miyazaki ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Metal Impurities

Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

2012 ◽  
Vol 5 (4) ◽  
pp. 042301 ◽  
Author(s):  
Takashi Sameshima ◽  
Naoto Miyazaki ◽  
Yuki Tsuchiya ◽  
Hiroki Hashiguchi ◽  
Tomihisa Tachibana ◽  
...  
Keyword(s):  
Solar Cells ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Metal Impurities

Control of metal impurities in “dirty” multicrystalline silicon for solar cells

2006 ◽  
Vol 134 (2-3) ◽  
pp. 282-286 ◽  
Author(s):  
A.A. Istratov ◽  
T. Buonassisi ◽  
M.D. Pickett ◽  
M. Heuer ◽  
E.R. Weber
Keyword(s):  
Solar Cells ◽  
Multicrystalline Silicon ◽  
Metal Impurities

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

2005 ◽  
Vol 52 (12) ◽  
pp. 1211-1215 ◽  
Author(s):  
J CHEN ◽  
T SEKIGUCHI ◽  
R XIE ◽  
P AHMET ◽  
T CHIKYO ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundaries ◽  
Small Angle ◽  
Multicrystalline Silicon ◽  
Induced Current ◽  
Electron Beam Induced Current

EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells

2012 ◽  
Vol 725 ◽  
pp. 129-132 ◽  
Author(s):  
Takashi Sameshima ◽  
Naoto Miyazaki ◽  
Yuki Tsuchiya ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Energy Levels ◽  
Multicrystalline Silicon ◽  
Etch Pits ◽  
Annealing Temperatures ◽  
Metal Impurities ◽  
Recombination Centers ◽  
Misorientation Angles

Interactions between intra-grain defects and metal impurities in multicrystalline silicon (mc-Si) were evaluated. After metal contaminations, EBIC contrasts at > 1.5o SA-GBs were more enhanced than those at Ni/1000 oC > Ni/600 oC. These results might attribute to Fe atoms form deeper energy levels of recombination centers than Ni atoms and the gettering abilities at SA-GBs depend on the misorientation angles. Many dark spots were observed in EBIC images in the Ni/600 oC. Since the dark spots corresponded to the etch pits, the dark spots might be dislocations decorated with Ni. The gettering abilities of SA-GBs depended on the misorientaion angles, and the recombination properties at SA-GBs and dark spots, such as small defects after metal contamination were different by annealing temperatures and the types of metal impurities.

Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon

2014 ◽  
Vol 53 (11) ◽  
pp. 112401 ◽  
Author(s):  
Masaki Funakoshi ◽  
Norihiro Ikeno ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
Koji Arafune ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Small Angle ◽  
Room Temperature ◽  
Multicrystalline Silicon ◽  
Room Temperature Photoluminescence
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