Optical Characterization of Carrier Localization, Carrier Transportation and Carrier Recombination in Blue-Emitting InGaN/GaN MQWs

2014 ◽  
Vol 4 (2) ◽  
pp. R10-R13 ◽  
Author(s):  
C. Li ◽  
E. B. Stokes ◽  
E. Armour
Keyword(s):  
Optical Characterization ◽  
Carrier Localization ◽  
Carrier Recombination ◽  
Carrier Transportation

Optical Characterization of Compensating Defects in Cubic SiC

2013 ◽  
Vol 740-742 ◽  
pp. 401-404
Author(s):  
Patrik Ščajev ◽  
K. Jarašiūnas ◽  
P.L. Abramov ◽  
S.P. Lebedev ◽  
A.A. Lebedev
Keyword(s):  
Carrier Density ◽  
Nonlinear Optical ◽  
Carrier Lifetime ◽  
Optical Trap ◽  
Optical Characterization ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Carrier Recombination ◽  
P Type

We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using time-resolved nonlinear optical techniques. Carrier lifetime and recharged trap recovery were measured by differential transmittivity technique. By monitoring nonequilibrium carrier dynamics, we analyzed impact of carrier density and temperature on carrier lifetime and recharged trap recovery rate. Large carrier lifetime and small diffusivity at low injections in highly compensated samples and their dependences on injection were explained by optical recharge of compensating aluminum impurities. The complete recharge of the compensating impurities by optical means allowed us to calculate the compensating aluminum density in n-type samples and compensating nitrogen in p-type ones.

Optical Characterization of MBE-Grown ZnO Epilayers

2011 ◽  
Vol 222 ◽  
pp. 86-89 ◽  
Author(s):  
Mindaugas Karaliunas ◽  
Tomas Serevicius ◽  
Edmundas Kuokstis ◽  
Saulius Juršėnas ◽  
Shao Ying Ting ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Molecular Beam ◽  
Optical Gain ◽  
Optical Characterization ◽  
Gain Coefficient ◽  
Structural Quality ◽  
Light Emitters ◽  
Recombination Time ◽  
Carrier Recombination

Optical characterization of molecular-beam-epitaxy-grown ZnO and MgZnO epitaxial layers on sapphire (0001) substrates is presented. The parameters such as carrier recombination time and optical gain coefficient are analyzed. Radiative recombination mechanisms of ZnO in dense quasiparticle system are discussed. The ZnO epilayers even with lower structural quality are tolerable for applications in optoelectronics as light emitters.

Crystal Growth and Electro-optical Characterization of In2Se2.7Sb0.3 Compound

2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Optical Characterization

Optical Characterization of Monodispersed Aaqueous Cu2+-Doped CdS Nanoparticles Prepared Under Microwave Irradiation Conditions

2014 ◽  
Vol 01 (999) ◽  
pp. 1-1
Author(s):  
Wei Zhu ◽  
Qihui Shen ◽  
Xinjian Bao ◽  
Xiao Bai ◽  
Tingting Li ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Optical Characterization ◽  
Cds Nanoparticles

Application of Kubelka-Munk model on the optical characterization of translucent dental zirconia

2021 ◽  
Vol 258 ◽  
pp. 123994
Author(s):  
Luciana M. Schabbach ◽  
Bruno C. dos Santos ◽  
Letícia S. De Bortoli ◽  
Márcio Celso Fredel ◽  
Bruno Henriques
Keyword(s):  
Optical Characterization
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