Optical Characterization of Compensating Defects in Cubic SiC

We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using time-resolved nonlinear optical techniques. Carrier lifetime and recharged trap recovery were measured by differential transmittivity technique. By monitoring nonequilibrium carrier dynamics, we analyzed impact of carrier density and temperature on carrier lifetime and recharged trap recovery rate. Large carrier lifetime and small diffusivity at low injections in highly compensated samples and their dependences on injection were explained by optical recharge of compensating aluminum impurities. The complete recharge of the compensating impurities by optical means allowed us to calculate the compensating aluminum density in n-type samples and compensating nitrogen in p-type ones.

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Optical Characterization of p-Type 4H-SiC Epilayers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.249 ◽

2015 ◽

Vol 821-823 ◽

pp. 249-252 ◽

Cited By ~ 1

Author(s):

Gediminas Liaugaudas ◽

Donatas Dargis ◽

Pawel Kwasnicki ◽

Hervé Peyre ◽

Roxana Arvinte ◽

...

Keyword(s):

Carrier Lifetime ◽

Diffusion Length ◽

Hole Mobility ◽

Optical Characterization ◽

Optical Pump ◽

Time Resolved ◽

Pump Probe ◽

Activation Ratio ◽

P Type

A series of aluminium doped (from 2×1016to 8×1019cm-3) 4H-SiC epitaxial layers were mainly studied by Low Temperature Photoluminescence and time-resolved optical pump-probe techniques to determine the concentration of aluminium, its activation ratio, the doping related carrier lifetime, hole mobility and excess carrier diffusion length.

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Dynamic Nonlinear Optical Characterization of Expanded Porphyrin Complexes by Using Time-resolved Degenerate Four-Wave Mixing

New Physics Sae Mulli ◽

10.3938/npsm.64.212 ◽

2014 ◽

Vol 64 (2) ◽

pp. 212-216

Author(s):

Clare Chisu BYEON*

Keyword(s):

Nonlinear Optical ◽

Optical Characterization ◽

Four Wave Mixing ◽

Wave Mixing ◽

Time Resolved ◽

Degenerate Four Wave Mixing ◽

Expanded Porphyrin

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Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.440.82 ◽

2013 ◽

Vol 440 ◽

pp. 82-87 ◽

Cited By ~ 2

Author(s):

Mohammad Jahangir Alam ◽

Mohammad Ziaur Rahman

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Multicrystalline Silicon ◽

Recombination Lifetime ◽

Spatially Resolved ◽

Carrier Recombination ◽

Negative Role ◽

P Type ◽

The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

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