Comment on “In Situ Measurements of Stress-Potential Coupling in Lithiated Silicon” [J. Electrochem. Soc., 157, A1253 (2010)], “On Plastic Deformation and Fracture in Si Films during Electrochemical Lithiation/Delithiation Cycling” [J. Electrochem. Soc., 160, A1885 (2013)], and “Real-Time Stress Measurements in Germanium Thin Film Electrodes during Electrochemical Lithiation/Delithiation Cycling” [J. Electrochem. Soc., 162, A2840 (2015)]

2016 ◽  
Vol 163 (7) ◽  
pp. Y15-Y16 ◽  
Author(s):  
Gyözö G. Láng
Keyword(s):  
Thin Film ◽  
Plastic Deformation ◽  
Real Time ◽  
In Situ Measurements ◽  
Stress Measurements ◽  
Time Stress ◽  
Electrochemical Lithiation ◽  
Deformation And Fracture ◽  
Si Films

scholarly journals Real-Time Stress Measurements in Germanium Thin Film Electrodes during Electrochemical Lithiation/Delithiation Cycling

2015 ◽  
Vol 162 (14) ◽  
pp. A2840-A2846 ◽  
Author(s):  
Siva P. V. Nadimpalli ◽  
Rajasekhar Tripuraneni ◽  
Vijay A. Sethuraman
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Stress Measurements ◽  
Time Stress ◽  
Electrochemical Lithiation ◽  
Thin Film Electrodes

scholarly journals On Plastic Deformation and Fracture in Si Films during Electrochemical Lithiation/Delithiation Cycling

2013 ◽  
Vol 160 (10) ◽  
pp. A1885-A1893 ◽  
Author(s):  
Siva P. V. Nadimpalli ◽  
Vijay A. Sethuraman ◽  
Giovanna Bucci ◽  
Venkat Srinivasan ◽  
Allan F. Bower ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Electrochemical Lithiation ◽  
Deformation And Fracture ◽  
Si Films

scholarly journals Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements

2002 ◽  
Vol 81 (22) ◽  
pp. 4162-4164 ◽  
Author(s):  
M. U. González ◽  
Y. González ◽  
L. González
Keyword(s):  
Relaxation Process ◽  
Real Time ◽  
Stress Measurements ◽  
Time Stress

A novel technique for in situ measurements of thin film properties

1985 ◽  
Vol 130 (1-2) ◽  
pp. 125-134 ◽  
Author(s):  
K. Hieber
Keyword(s):  
Thin Film ◽  
In Situ Measurements ◽  
Film Properties ◽  
Novel Technique

In situ measurements of the coercive force of thin film discs-a comparison of different techniques

1990 ◽  
Vol 26 (5) ◽  
pp. 2472-2474 ◽  
Author(s):  
J.L. Pressesky ◽  
S.Y. Lee
Keyword(s):  
Thin Film ◽  
Coercive Force ◽  
In Situ Measurements

scholarly journals Why In Situ, Real-Time Characterization of Thin-Film Growth Processes?

MRS Bulletin ◽  
1995 ◽  
Vol 20 (5) ◽  
pp. 14-17 ◽  
Author(s):  
Orlando Auciello ◽  
Alan R. Krauss
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Analytical Methods ◽  
Film Growth ◽  
High Temperature Superconductors ◽  
Thin Layers ◽  
Thin Film Growth ◽  
Sampling Depth ◽  
Growth Environment

It is anticipated that a new generation of advanced electronic and optical devices will involve the synthesis of diverse materials in single or multielement thin-film form, or in layered heterostructures. These devices will most likely involve diverse materials such as high-temperature superconductors, ferroelectric, electrooptic, and optical materials; diamond; nitrides; semiconductors; insulators; and metals in the form of ultra-thin layers with sharp interfaces in which the layer thickness may reach atomic dimensions. Therefore, it becomes increasingly important to be able to monitor the deposition process in situ and in real time, particularly for complex multicomponent oxides or nitrides, in which the production of the desired phase is a highly sensitive function of the growth conditions, often requiring relatively high-pressure oxygen or nitrogen environments up to several hundred mTorr, and in some cases, several Torr. Consequently, the growth environment for many of these materials is incompatible with conventional surface-analytic methods, which are typically restricted to high-or ultrahigh-vacuum conditions. New deposition and analytical methods, or adaptation of those already established, will be required.Since thin-film growth occurs at the surface, the analytical methods should be highly surface-specific, although sub-surface diffusion and chemical processes also affect film properties. Sampling depth and ambient-gas compatibility are key factors which must be considered when choosing in situ probes of thin-film growth phenomena. In most cases, the sampling depth depends on the mean range of the exit species (ion, photon, or electron) in the sample.

In Situ Measurement of Stresses in Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
Reinhard Abermann
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Adsorption ◽  
Gas Diffusion ◽  
Island Growth ◽  
Stress Measurements ◽  
Growth Modes ◽  
Columnar Grain ◽  
Selection Of

ABSTRACTIn this paper the results of experiments are summarized in which the internal stress (i.e. force per unit width) of thin films was measured in situ under UHV conditions with a bending beam apparatus. It is demonstrated that characteristic types of stress vs. thickness curves can be correlated with different growth modes (i.e. columnar grain growth and island growth) caused by differences in the adatom mobility of the deposited material. With a selection of thin film systems it is then shown that stress measurements can be used to study the effect of gas incorporation, of gas diffusion from the substrate, of reaction with the substrate and of the substrate temperature on the growth and structure of a thin film. Finally it will be demonstrated that stress measurements can even be used to study gas adsorption on vapor deposited films.

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