Dependence of RF Power Bias on Hydrogenated Amorphous Silicon by High-Density Plasma Chemical Vapor Deposition

ECS Meeting Abstracts ◽

10.1149/ma2005-02/24/883 ◽

2005 ◽

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Rf Power ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous ◽

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Influence of RF Bias on Hydrogenated Amorphous Silicon by High-Density Plasma Chemical Vapor Deposition

Journal of The Electrochemical Society ◽

10.1149/1.2713723 ◽

2007 ◽

Vol 154 (5) ◽

pp. G122 ◽

Author(s):

Wen-Chu Hsiao ◽

Chuan-Pu Liu ◽

Ying-Lang Wang

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

High Density ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous ◽

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Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2007.07.095 ◽

2008 ◽

Vol 69 (2-3) ◽

pp. 648-652 ◽

Author(s):

Wen-Chu Hsiao ◽

Chuan-Pu Liu ◽

Ying-Lang Wang

Keyword(s):

Thermal Properties ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous ◽

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In situ optical diagnosis on hydrogenated amorphous silicon grown by vibration superimposed plasma chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114284 ◽

1995 ◽

Vol 66 (9) ◽

pp. 1071-1073 ◽

Author(s):

Nobuo Naito ◽

Akihiro Takano ◽

Masatomo Sumiya ◽

Masashi Kawasaki ◽

Hideomi Koinuma

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Optical Diagnosis ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

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Effect of HeatingSiH4on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.4373 ◽

1994 ◽

Vol 33 (Part 1, No. 7B) ◽

pp. 4373-4376 ◽

Author(s):

Yoshihiro Hishikawa ◽

Manabu Sasaki ◽

Sadaji Tsuge ◽

Shinya Tsuda

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

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Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.113612 ◽

1995 ◽

Vol 66 (8) ◽

pp. 965-967 ◽

Author(s):

Ian S. Osborne ◽

Nobuhiro Hata ◽

Akihisa Matsuda

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Radio Frequency Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Frequency Plasma ◽

Hydrogenated Amorphous

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Mechanism of plasma chemical-vapor deposition of hydrogenated amorphous silicon

Current Topics in Amorphous Materials ◽

10.1016/b978-0-444-81576-7.50054-x ◽

1993 ◽

pp. 345-350 ◽

Author(s):

Akihisa Matsuda

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

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Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14Multi-Hollow Discharge Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.01ad03 ◽

2012 ◽

Vol 51 (1S) ◽

pp. 01AD03

Author(s):

Kazunori Koga ◽

Kenta Nakahara ◽

Yeon-Won Kim ◽

Takeaki Matsunaga ◽

Daisuke Yamashita ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Discharge Plasma ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

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Powder‐free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge

Applied Physics Letters ◽

10.1063/1.104087 ◽

1990 ◽

Vol 57 (16) ◽

pp. 1616-1618 ◽

Author(s):

Y. Watanabe ◽

M. Shiratani ◽

H. Makino

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Rf Discharge ◽

Rf Power ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous ◽

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Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.

Journal of Applied Physics ◽

10.1063/1.347694 ◽

1991 ◽

Vol 69 (1) ◽

pp. 508-510 ◽

Author(s):

Yoshihiro Hishikawa ◽

Sadaji Tsuge ◽

Noboru Nakamura ◽

Shinya Tsuda ◽

Shoichi Nakano ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Wide Gap ◽

Hydrogenated Amorphous ◽

Substrate Temperatures

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Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.01ad03 ◽

2012 ◽

Vol 51 (1) ◽

pp. 01AD03 ◽

Author(s):

Kazunori Koga ◽

Kenta Nakahara ◽

Yeon-Won Kim ◽

Takeaki Matsunaga ◽

Daisuke Yamashita ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Discharge Plasma ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Hydrogenated Amorphous

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