Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH4+B10H14Multi-Hollow Discharge Plasma Chemical Vapor Deposition

Amorphous Silicon ◽

Vapor Deposition ◽

Discharge Plasma ◽

Chemical Vapor ◽

Silicon Films ◽

Plasma Chemical ◽

Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.01ad03 ◽

2012 ◽

Vol 51 (1) ◽

pp. 01AD03 ◽

Cited By ~ 1

Author(s):

Kazunori Koga ◽

Kenta Nakahara ◽

Yeon-Won Kim ◽

Takeaki Matsunaga ◽

Daisuke Yamashita ◽

...

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Discharge Plasma ◽

Chemical Vapor ◽

Silicon Films ◽

Plasma Chemical ◽

In situ optical diagnosis on hydrogenated amorphous silicon grown by vibration superimposed plasma chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114284 ◽

1995 ◽

Vol 66 (9) ◽

pp. 1071-1073 ◽

Cited By ~ 5

Author(s):

Nobuo Naito ◽

Akihiro Takano ◽

Masatomo Sumiya ◽

Masashi Kawasaki ◽

Hideomi Koinuma

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Optical Diagnosis ◽

Plasma Chemical ◽

Influence of RF Bias on Hydrogenated Amorphous Silicon by High-Density Plasma Chemical Vapor Deposition

Journal of The Electrochemical Society ◽

10.1149/1.2713723 ◽

2007 ◽

Vol 154 (5) ◽

pp. G122 ◽

Cited By ~ 9

Author(s):

Wen-Chu Hsiao ◽

Chuan-Pu Liu ◽

Ying-Lang Wang

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Density ◽

Plasma Chemical ◽

Hydrogenated Amorphous ◽

Density Plasma

Thermal properties of hydrogenated amorphous silicon prepared by high-density plasma chemical vapor deposition

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2007.07.095 ◽

2008 ◽

Vol 69 (2-3) ◽

pp. 648-652 ◽

Cited By ~ 4

Author(s):

Wen-Chu Hsiao ◽

Chuan-Pu Liu ◽

Ying-Lang Wang

Keyword(s):

Thermal Properties ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Hydrogenated Amorphous ◽

Density Plasma

Effect of HeatingSiH4on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.4373 ◽

1994 ◽

Vol 33 (Part 1, No. 7B) ◽

pp. 4373-4376 ◽

Cited By ~ 5

Author(s):

Yoshihiro Hishikawa ◽

Manabu Sasaki ◽

Sadaji Tsuge ◽

Shinya Tsuda

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.113612 ◽

1995 ◽

Vol 66 (8) ◽

pp. 965-967 ◽

Cited By ~ 12

Author(s):

Ian S. Osborne ◽

Nobuhiro Hata ◽

Akihisa Matsuda

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Radio Frequency Plasma ◽

Plasma Chemical ◽

Frequency Plasma ◽

Mechanism of plasma chemical-vapor deposition of hydrogenated amorphous silicon

Current Topics in Amorphous Materials ◽

10.1016/b978-0-444-81576-7.50054-x ◽

1993 ◽

pp. 345-350 ◽

Cited By ~ 1

Author(s):

Akihisa Matsuda

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Dependence of RF Power Bias on Hydrogenated Amorphous Silicon by High-Density Plasma Chemical Vapor Deposition

ECS Meeting Abstracts ◽

10.1149/ma2005-02/24/883 ◽

2005 ◽

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Rf Power ◽

Plasma Chemical ◽

Hydrogenated Amorphous ◽

Density Plasma

Device‐quality wide‐gap hydrogenated amorphous silicon films deposited by plasma chemical vapor deposition at low substrate temperatures.

Journal of Applied Physics ◽

10.1063/1.347694 ◽

1991 ◽

Vol 69 (1) ◽

pp. 508-510 ◽

Cited By ~ 38

Author(s):

Yoshihiro Hishikawa ◽

Sadaji Tsuge ◽

Noboru Nakamura ◽

Shinya Tsuda ◽

Shoichi Nakano ◽

...

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Plasma Chemical ◽

Wide Gap ◽

Hydrogenated Amorphous ◽

Substrate Temperatures

HIGH RATE DEPOSITION OF HYDROGENATED AMORPHOUS SILICON USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1989578 ◽

1989 ◽

Vol 50 (C5) ◽

pp. C5-667-C5-672

Author(s):

DING-KUN PENG ◽

CHUN-LIN WANG ◽

GUANG-YAO MENG

Keyword(s):

Vapor Deposition ◽

Microwave Plasma ◽

Chemical Vapor ◽

Deposition Process ◽

High Rate ◽

Plasma Chemical ◽