Method of Strengthening Safe Operating Area for SOI Lateral Insulated Gate Bipolar Transistor

2008 ◽  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Safe Operating

scholarly journals A Simplified Spice Model for IGBT

1998 ◽  
Vol 21 (4) ◽  
pp. 279-292 ◽  
Author(s):  
A. Haddi ◽  
A. Maouad ◽  
O. Elmazria ◽  
A. Hoffmann ◽  
J. P. Charles
Keyword(s):  
Equivalent Circuit ◽  
Bipolar Transistor ◽  
Experimental Results ◽  
Insulated Gate Bipolar Transistor ◽  
Spice Model ◽  
Safe Operating ◽  
Good Agreement ◽  
Latch Up

A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circuit, is proposed. This macromodel is provided to simulate various mechanisms governing the behavior of the IGBT, and it takes into account specific phenomena limiting its SOA (Safe Operating Area), such as forward and reverse biased SOA, as well as latch-up. The validity of this model is confirmed by comparison between simulation and experimental results as well as the data sheets. This comparison is tested for two IGBT devices showing two different powers and switching speeds, and a good agreement is recorded for both IGBT devices.

Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

2012 ◽  
Vol 33 (12) ◽  
pp. 1684-1686 ◽  
Author(s):  
Huaping Jiang ◽  
Jin Wei ◽  
Bo Zhang ◽  
Wanjun Chen ◽  
Ming Qiao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Band To Band Tunneling ◽  
Tunneling Injection

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

2015 ◽  
Vol 36 (6) ◽  
pp. 591-593 ◽  
Author(s):  
Hao Feng ◽  
Wentao Yang ◽  
Yuichi Onozawa ◽  
Takashi Yoshimura ◽  
Akira Tamenori ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor
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