The Investigation of Molybdenum Doping in Silicon Oxide Based Resistive Switching Memory

2012 ◽  
Keyword(s):  
Resistive Switching ◽  
Silicon Oxide ◽  
Resistive Switching Memory ◽  
Molybdenum Doping ◽  
Switching Memory

Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

2013 ◽  
Vol 102 (4) ◽  
pp. 043508 ◽  
Author(s):  
Yu-Ting Chen ◽  
Ting-Chang Chang ◽  
Jheng-Jie Huang ◽  
Hsueh-Chih Tseng ◽  
Po-Chun Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Silicon Oxide ◽  
Switching Characteristic ◽  
Resistive Switching Memory ◽  
Molybdenum Doping ◽  
Switching Memory

A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiOx-based resistive switching memory

2016 ◽  
Vol 1 (4) ◽  
Author(s):  
Yao-Feng Chang ◽  
Burt Fowler ◽  
Ying-Chen Chen ◽  
Fei Zhou ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Silicon Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Long Term Potentiation ◽  
Spike Timing ◽  
Oxide Semiconductor ◽  
Resistive Switching Memory ◽  
Term Potentiation ◽  
Switching Memory

Abstract We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor

2014 ◽  
Vol 2 (22) ◽  
pp. 4401-4405 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Wen-Chun Yen ◽  
Shih-Ming Lin ◽  
Chi-Yung Lee ◽  
Jiang Wu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Silicon Oxide ◽  
Resistive Switching Memory ◽  
Doped Silicon ◽  
Switching Memory

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory
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