Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory

2018 ◽  
Vol 65 (7) ◽  
pp. 2812-2819 ◽  
Author(s):  
Chih-Chieh Hsu ◽  
Yu-Ting Chen ◽  
Po-Yang Chuang ◽  
Yu-Sheng Lin
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Characteristic ◽  
Volatile Memory ◽  
Switching Memory

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

2015 ◽  
Vol 3 (20) ◽  
pp. 5207-5213 ◽  
Author(s):  
Minghui Cao ◽  
Baochang Cheng ◽  
Li Xiao ◽  
Jie Zhao ◽  
Xiaohui Su ◽  
...  
Keyword(s):  
Space Charge ◽  
Resistive Switching ◽  
Polarization Effect ◽  
Space Charge Polarization ◽  
Resistive Switching Memory ◽  
Charge Polarization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
P Type ◽  
Switching Memory

Two-terminal devices based on p-type GeSe2:Bi nanobelts show excellent symmetrical nonvolatile negative resistive switching memory behavior, originating from trap-induced space charge polarization effect.

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

Resistive switching behaviour in a polymannose film for multistate non-volatile memory application

2021 ◽  
Author(s):  
Ilias A. Tayeb ◽  
Feng Zhao ◽  
Jafri M. Abdullah ◽  
Kuan Y. Cheong
Keyword(s):  
Environmental Impacts ◽  
Resistive Switching ◽  
Organic Materials ◽  
Electronic Waste ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives to produce resistive switching memory due to their biodegradability and benign environmental impacts.

Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite

NANO ◽  
2020 ◽  
Vol 15 (09) ◽  
pp. 2050111
Author(s):  
Enming Zhao ◽  
Shuangqiang Liu ◽  
Xiaodan Liu ◽  
Chen Wang ◽  
Guangyu Liu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Flexible Substrate ◽  
Random Access ◽  
Polymer Nanocomposite ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Memory Characteristic ◽  
Switching Memory

Flexible resistive switching memory devices based on graphene oxide (GO) polymer nanocomposite were prepared on flexible substrate to research the influence of bending on resistive switching behavior. The devices showed evident response in resistive switching memory characteristics to flexible bending. The 2000 cycles flexible bending leads to the switch of resistive switching memory characteristic from write-once-read-many time memory (WORM) to static random access memory (SRAM). Both WORM and SRAM memory properties are all repeatable, and the threshold switching voltage also showed good consistency. The resistive switching mechanism is attributed to the formation of carbon-rich conductive filaments for nonvolatile WORM characteristics. The bending-induced micro-crack may be responsible for the partial broken of the electrical channels, and may lead to the volatile SRAM characteristics.

A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

2020 ◽  
Vol 87 ◽  
pp. 105932 ◽  
Author(s):  
Jitendra Singh ◽  
R.G. Singh ◽  
Subodh K. Gautam ◽  
Himanshi Gupta ◽  
Fouran Singh
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Ion Irradiation ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

2021 ◽  
Vol 7 (5) ◽  
pp. 2170015
Author(s):  
Yu‐Chuan Shih ◽  
Ling Lee ◽  
Kai‐De Liang ◽  
Arumugam Manikandan ◽  
Wen‐Wu Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Single Crystalline ◽  
Resistive Switching Memory ◽  
Switching Memory

Polymer Nanocomposites for Resistive Switching Memory

2021 ◽  
pp. 211-246
Author(s):  
Qazi Muhammad Saqib ◽  
Muhammad Umair Khan ◽  
Jinho Bae
Keyword(s):  
Polymer Nanocomposites ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory
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