Study of Crack Propagation on Single Crystalline Silicon Wafer during Electrochemical Lithiation and Delithiation

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.


2007 ◽  
Vol 46 (1) ◽  
pp. 21-23 ◽  
Author(s):  
Norihito Kawaguchi ◽  
Ryusuke Kawakami ◽  
Ken-ichiro Nishida ◽  
Naoya Yamamoto ◽  
Miyuki Masaki ◽  
...  

2015 ◽  
Vol 77 ◽  
pp. 279-285 ◽  
Author(s):  
Jinyoun Cho ◽  
Hae-Na-Ra Shin ◽  
Jieun Lee ◽  
Yoonseok Choi ◽  
Jongchul Lee ◽  
...  

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