Investigating the role of crystallographic orientation of single crystalline silicon on their electrochemical lithiation behavior: Surface chemistry of Si determines the bulk lithiation

2020 ◽  
Vol 20 ◽  
pp. 100585
Author(s):  
Kanchan Mala ◽  
Malik Wahid ◽  
S.W. Gosavi ◽  
S.I. Patil ◽  
Suhas M. Jejurikar
Keyword(s):  
Surface Chemistry ◽  
Crystallographic Orientation ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Electrochemical Lithiation

Role of Tribochemistry in Nanowear of Single-Crystalline Silicon

2012 ◽  
Vol 4 (3) ◽  
pp. 1585-1593 ◽  
Author(s):  
Jiaxin Yu ◽  
Seong H. Kim ◽  
Bingjun Yu ◽  
Linmao Qian ◽  
Zhongrong Zhou
Keyword(s):  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Growth and chemical modification of silicon nanostructures templated in molecule corrals: Parallels with the surface chemistry of single crystalline silicon

2019 ◽  
Vol 683 ◽  
pp. 38-45 ◽  
Author(s):  
Shawn P. Sullivan ◽  
Timothy R. Leftwich ◽  
Christopher M. Goodwin ◽  
Chaoying Ni ◽  
Andrew V. Teplyakov ◽  
...  
Keyword(s):  
Chemical Modification ◽  
Surface Chemistry ◽  
Crystalline Silicon ◽  
Silicon Nanostructures ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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