(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1749-1749
Author(s):  
Dirk Wolansky ◽  
Jean-Paul Blaschke ◽  
Jürgen Drews ◽  
Thomas Grabolla ◽  
Bernd Heinemann ◽  
...  
2008 ◽  
Vol 154-155 ◽  
pp. 155-158 ◽  
Author(s):  
B. Imbert ◽  
S. Zoll ◽  
P. Garnier ◽  
B. Pernet ◽  
D. Galpin ◽  
...  

2019 ◽  
Vol 11 (2) ◽  
pp. 321-326 ◽  
Author(s):  
Felicia Goh ◽  
Vincent K.T. Sih ◽  
Wee Leng Tan ◽  
Zainab Ismail

2020 ◽  
Vol 98 (5) ◽  
pp. 351-361
Author(s):  
Dirk Wolansky ◽  
Jean-Paul Blaschke ◽  
Jürgen Drews ◽  
Thomas Grabolla ◽  
Bernd Heinemann ◽  
...  

Author(s):  
F.H. Cioldin ◽  
M.V.P. dos Santos ◽  
I. Doi ◽  
J.A. Diniz ◽  
A. Flacker ◽  
...  

2006 ◽  
Vol 913 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Tsung-Yang Liow ◽  
Kian-Ming Tan ◽  
Kah-Wee Ang ◽  
King-Jien Chui ◽  
...  

AbstractWe report the use of nickel-platinum silicide (NiPtSi) as a source/drain (S/D) material for strain engineering in P-MOSFETs to improve drive current performance. The material and electrical characteristics of NiPtSi with various Pt concentrations was investigated and compared with those of NiSi. Ni0.95Pt0.05Si was selected for device integration. A 0.18 μm gate length P-MOSFET achieved a 22% gain in IDsat when Ni0.95Pt0.05Si S/D is employed instead of NiSi S/D. The enhancement is attributed to strain modification effects related to the nickel-platinum silicidation process.


Author(s):  
J.P. Benedict ◽  
Ron Anderson ◽  
S. J. Klepeis

Traditional specimen preparation procedures for non-biological samples, especially cross section preparation procedures, involves subjecting the specimen to ion milling for times ranging from minutes to tens of hours. Long ion milling time produces surface alteration, atomic number and rough-surface topography artifacts, and high temperatures. The introduction of new tools and methods in this laboratory improved our ability to mechanically thin specimens to a point where ion milling time was reduced to one to ten minutes. Very short ion milling times meant that ion milling was more of a cleaning operation than a thinning operation. The preferential thinning and the surface topography that still existed in briefly ion milled samples made the study of interfaces between materials such as platinum silicide and silicon difficult. These two problems can be eliminated by completely eliminating the ion milling step and mechanically polishing the sample to TEM transparency with the procedure outlined in this communication. Previous successful efforts leading to mechanically thinned specimens have shown that problems center on tool tilt control, removal of polishing damage, and specimen cleanliness.


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