Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
High Density ◽  
Memory Array ◽  
Electrode Contact ◽  
Change Memory

Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact

2008 ◽  
Vol 93 (10) ◽  
pp. 103107 ◽  
Author(s):  
L. C. Wu ◽  
Z. T. Song ◽  
F. Rao ◽  
Y. F. Gong ◽  
B. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Electrode Contact ◽  
Change Memory

Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

2007 ◽  
Vol 90 (1) ◽  
pp. 88-94 ◽  
Author(s):  
J. M. SHIN ◽  
Y. J. SONG ◽  
D. W. KANG ◽  
C. W. JEONG ◽  
K. C. RYOO ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Ring Type ◽  
Electrode Contact ◽  
Change Memory

scholarly journals Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1268
Author(s):  
Shinyoung Kang ◽  
Juyoung Lee ◽  
Myounggon Kang ◽  
Yunheub Song
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Long Term Potentiation ◽  
Interfacial Phase ◽  
Artificial Synapse ◽  
Electrode Contact ◽  
Contact Size ◽  
Change Memory

In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb2Te3 alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb2Te3 (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.

scholarly journals Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage

2011 ◽  
Vol 50 (9S1) ◽  
pp. 09MD04 ◽  
Author(s):  
Lei Wang ◽  
C. David Wright ◽  
Purav Shah ◽  
Mustafa M. Aziz ◽  
Abu Sebastian ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
High Density ◽  
Archival Storage ◽  
Electrical Probe ◽  
Change Memory

Dry Etching of Nanosized Ge1Sb2Te4 Patterns Using TiN Hard Mask for High Density Phase-Change Memory

2009 ◽  
Vol 9 (2) ◽  
pp. 1526-1529 ◽  
Author(s):  
Gaoming Feng ◽  
Bo Liu ◽  
Zhitang Song ◽  
Shilong Lv ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Dry Etching ◽  
High Density ◽  
Hard Mask ◽  
Change Memory

scholarly journals Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage

2011 ◽  
Vol 50 (9) ◽  
pp. 09MD04
Author(s):  
Lei Wang ◽  
C. David Wright ◽  
Purav Shah ◽  
Mustafa M. Aziz ◽  
Abu Sebastian ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
High Density ◽  
Archival Storage ◽  
Electrical Probe ◽  
Change Memory

1T2R Structure with Cross-Spacer for High-Density Phase Change Memory

2008 ◽  
Author(s):  
Chain-Ming Lee ◽  
Chih-Wei Chen ◽  
Wei-Su Chen ◽  
Der-Sheng Chao ◽  
Ming-Jung Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
High Density ◽  
Change Memory

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

2015 ◽  
Vol 36 (5) ◽  
pp. 056001 ◽  
Author(s):  
Dan Gao ◽  
Bo Liu ◽  
Ying Li ◽  
Zhitang Song ◽  
Wanchun Ren ◽  
...  
Keyword(s):  
Phase Change ◽  
Oxygen Plasma ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Effect Of Oxygen ◽  
Change Memory

Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly

ACS Nano ◽  
2015 ◽  
Vol 9 (4) ◽  
pp. 4120-4128 ◽  
Author(s):  
Beom Ho Mun ◽  
Byoung Kuk You ◽  
Se Ryeun Yang ◽  
Hyeon Gyun Yoo ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Phase Change ◽  
Self Assembly ◽  
Phase Change Memory ◽  
Memory Array ◽  
Change Memory
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