scholarly journals Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1268
Author(s):  
Shinyoung Kang ◽  
Juyoung Lee ◽  
Myounggon Kang ◽  
Yunheub Song
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Long Term Potentiation ◽  
Interfacial Phase ◽  
Artificial Synapse ◽  
Electrode Contact ◽  
Contact Size ◽  
Change Memory

In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb2Te3 alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb2Te3 (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.

Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
High Density ◽  
Memory Array ◽  
Electrode Contact ◽  
Change Memory

Performance improvement of phase-change memory cell with cup-shaped bottom electrode contact

2008 ◽  
Vol 93 (10) ◽  
pp. 103107 ◽  
Author(s):  
L. C. Wu ◽  
Z. T. Song ◽  
F. Rao ◽  
Y. F. Gong ◽  
B. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
Performance Improvement ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Electrode Contact ◽  
Change Memory

Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

2007 ◽  
Vol 90 (1) ◽  
pp. 88-94 ◽  
Author(s):  
J. M. SHIN ◽  
Y. J. SONG ◽  
D. W. KANG ◽  
C. W. JEONG ◽  
K. C. RYOO ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Ring Type ◽  
Electrode Contact ◽  
Change Memory

Narrow Heater Bottom Electrode-Based Phase Change Memory as a Bidirectional Artificial Synapse

2018 ◽  
Vol 4 (9) ◽  
pp. 1800223 ◽  
Author(s):  
Selina La Barbera ◽  
Denys R. B. Ly ◽  
Gabriele Navarro ◽  
Niccolò Castellani ◽  
Olga Cueto ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
Artificial Synapse ◽  
Change Memory

scholarly journals Retraction: Kang, S., et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 408
Author(s):  
Shinyoung Kang ◽  
Juyoung Lee ◽  
Myounggon Kang ◽  
Yunheub Song
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Artificial Synapse ◽  
Change Memory

The authors and journal retract the article, “Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications” [...]

scholarly journals Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory

2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  
Keyword(s):  
Transition Metal ◽  
Phase Change ◽  
Topological Insulators ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Metal Dichalcogenides ◽  
Superlattice Structures ◽  
Change Memory

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.

scholarly journals Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing

2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  
Keyword(s):  
Phase Change ◽  
Crucial Role ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory

Effect of the Bottom Electrode Contact (BEC) on the phase transformation of N2 doped Ge2Sb2Te 5 (N-GST) in a Phase-change Random Access Memory

2004 ◽  
Vol 830 ◽  
Author(s):  
Suyoun Lee ◽  
Y. J. Song ◽  
Y. N. Hwang ◽  
S. H. Lee ◽  
J. H. Park ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Phase Change ◽  
Bottom Electrode ◽  
Random Access ◽  
Surface Oxidation ◽  
Random Access Memory ◽  
Access Memory ◽  
Electrode Contact ◽  
Electrode Metal ◽  
Contact Size

With respect to the operation of a Phase-change Random Access Memory (PRAM or PcRAM), we studied the effect of the contact between the electrode metal and the chalcogenide glass, N2 doped Ge2Sb2Te5 in this report. We investigated a change of the resistance-programming current pulse (R-I) curve varying the contact size and the electrode material. Also we tested the surface oxidation of the electrode. We found that the programming current, the resistance of the programmed state (“RESET”) and the erased state (“SET”) were highly dependent on the above parameters. These results are presented and a more effective way to the high density PRAM will be proposed.

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Small ◽  
2018 ◽  
Vol 14 (24) ◽  
pp. 1704514 ◽  
Author(s):  
Philippe Kowalczyk ◽  
Françoise Hippert ◽  
Nicolas Bernier ◽  
Cristian Mocuta ◽  
Chiara Sabbione ◽  
...  
Keyword(s):  
Phase Change ◽  
Van Der Waals ◽  
Phase Change Memory ◽  
Interfacial Phase ◽  
Change Memory
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