Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly

ACS Nano ◽  
2015 ◽  
Vol 9 (4) ◽  
pp. 4120-4128 ◽  
Author(s):  
Beom Ho Mun ◽  
Byoung Kuk You ◽  
Se Ryeun Yang ◽  
Hyeon Gyun Yoo ◽  
Jong Min Kim ◽  
...  
2013 ◽  
Vol 1556 ◽  
Author(s):  
Beom Ho Mun ◽  
Woon Ik Park ◽  
You Yin ◽  
Byoung Kuk You ◽  
Jae Jin Yun ◽  
...  

ABSTRACTWe report the demonstration of low power phase change memory (PCM) by forming thin self-assembled SiOx nanostructures between Ge2Sb2Te5 (GST) and a TiN heater layer utilizing a block copolymer (BCP) self-assembly technology. The reset current was decreased about three-fold as fill factor, which is the occupying area fraction of self-assembled SiOx nanostructures on a TiN heater layer, increased to 75.3%. The electro-thermal simulation shows the better heat efficiency due to the nano-patterned insulating oxide.


2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  

2017 ◽  
Author(s):  
Robert L. Bruce ◽  
Gloria Fraczak ◽  
John M. Papalia ◽  
HsinYu Tsai ◽  
Matt BrightSky ◽  
...  

2018 ◽  
Vol 29 (6) ◽  
pp. 1806338 ◽  
Author(s):  
Do Hyun Kim ◽  
Han Eol Lee ◽  
Byoung Kuk You ◽  
Sung Beom Cho ◽  
Rohan Mishra ◽  
...  

ACS Nano ◽  
2013 ◽  
Vol 7 (3) ◽  
pp. 2651-2658 ◽  
Author(s):  
Woon Ik Park ◽  
Byoung Kuk You ◽  
Beom Ho Mun ◽  
Hyeon Kook Seo ◽  
Jeong Yong Lee ◽  
...  

2018 ◽  
Vol 7 (3) ◽  
pp. Q33-Q37
Author(s):  
Yao-Yao Lu ◽  
Dao-Lin Cai ◽  
Yi-Feng Chen ◽  
Yu Lei ◽  
Shuai Yan ◽  
...  

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