Characterization of Single Crystalline CdS Nanowires Synthesized by Solvothermal Method

2014 ◽  
Vol 14 (7) ◽  
pp. 5449-5454 ◽  
Author(s):  
N. M. A. Hadia ◽  
Santiago García-Granda ◽  
José R. García
Keyword(s):  
Solvothermal Method ◽  
Single Crystalline ◽  
Cds Nanowires

scholarly journals Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25298-25304 ◽  
Author(s):  
Haidong Wang ◽  
Dingshan Zheng ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Weida Hu
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline ◽  
Cds Nanowires ◽  
First Time

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.

Synthesis and Characterization of Single-crystalline TaC Whiskers

2021 ◽  
pp. 126183
Author(s):  
Jian Zhang ◽  
Lei Zhao ◽  
Hongyu Li ◽  
Fugui Lei ◽  
Liqing Qiao
Keyword(s):  
Synthesis And Characterization ◽  
Single Crystalline

scholarly journals Synthesis and characterization of Gd2Zr2O7 defect-fluorite oxide nanoparticles via a homogeneous precipitation-solvothermal method

RSC Advances ◽  
2017 ◽  
Vol 7 (87) ◽  
pp. 54980-54985 ◽  
Author(s):  
Zhe Tang ◽  
Zhangyi Huang ◽  
Jianqi Qi ◽  
Xiaofeng Guo ◽  
Wei Han ◽  
...  
Keyword(s):  
Solvothermal Method ◽  
Synthesis And Characterization ◽  
Oxide Nanoparticles ◽  
Homogeneous Precipitation

Defect-fluorite structured Gd2Zr2O7 nanoparticles were successfully synthesized via a homogeneous precipitation-solvothermal method using urea as a precipitant.

Fabrication and Characterization of Single-Crystalline AgSbTe 2 Nanowire Arrays

2013 ◽  
Vol 30 (10) ◽  
pp. 108102 ◽  
Author(s):  
You-Wen Yang ◽  
Tian-Ying Li ◽  
Wen-Bin Zhu ◽  
Dong-Ming Ma ◽  
Dong Chen
Keyword(s):  
Nanowire Arrays ◽  
Single Crystalline ◽  
Fabrication And Characterization

Controllable fabrication and electromechanical characterization of single crystalline Sb-doped ZnO nanobelts

2008 ◽  
Vol 92 (18) ◽  
pp. 183117 ◽  
Author(s):  
Ya Yang ◽  
Junjie Qi ◽  
Yue Zhang ◽  
Qingliang Liao ◽  
Lidan Tang ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Doped Zno ◽  
Controllable Fabrication ◽  
Electromechanical Characterization

Solvothermal synthesis and characterization of well-dispersed cerium-doped Y2SiO5 phosphor particles

2021 ◽  
Vol 112 (10) ◽  
pp. 812-816
Author(s):  
Xianxue Li
Keyword(s):  
Solvothermal Method ◽  
Luminescence Decay ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fluorescence Spectrophotometry ◽  
Decay Properties ◽  
Transmission Electron ◽  
Water As Solvent ◽  
Pure Phase

Abstract Well-dispersed cerium-doped Y2SiO5 (Ce:YSO) phosphor particles with spherical morphology and good luminescence intensity have been achieved by a solvothermal method with ethanol and water as solvent media. X-ray diffraction, Fourier transform infrared spectroscopy, fluorescence spectrophotometry and transmission electron microscopy were employed to characterize the as-synthesized Ce:YSO precursor and powders. The results showed that pure-phase Ce:YSO powders with a mean particle size of about 162 nm were accurately available at 310°C and above. The fluorescence ability and persistent luminescence decay properties of the Ce:YSO powders were also studied, and the excellent fluorescence properties could be attributed to the homogeneous Ce:YSO particles obtained through the solvothermal method.

Characterization of cubic and star-shaped dendritic PbS structures synthesized by a solvothermal method

2012 ◽  
Vol 81 ◽  
pp. 55-58 ◽  
Author(s):  
Anukorn Phuruangrat ◽  
Titipun Thongtem ◽  
Budsabong Kuntalue ◽  
Somchai Thongtem
Keyword(s):  
Solvothermal Method

Growth of GaN:Sb MBE-Layers

2001 ◽  
Vol 693 ◽  
Author(s):  
P. Cristea ◽  
D.G. Ebling ◽  
K.W. Benz
Keyword(s):  
Composition Range ◽  
Miscibility Gap ◽  
Side Reactions ◽  
Equilibrium Conditions ◽  
Mbe Growth ◽  
Single Crystalline ◽  
N Source ◽  
Atomic Radii ◽  
Crystalline Growth

AbstractThe single crystalline growth of the GaNxSb1-x system is difficult due to the miscibility gap expected for nearly the whole composition range under thermodynamic equilibrium conditions. The gap is determined by the differences of the atomic radii and of the electro negativities for N and Sb. To overcome this problem crystal growth has to be performed under non-equilibrium conditions with kinetically controlled growth, as it is observed for molecular beam epitaxy (MBE) growth. A single crystalline MBE-growth within the miscibility gap has been demonstrated already in the GaAsxN1-x system exhibiting a similar large miscibility gap. GaN:Sb-layers were grown on Si(111)-substrates by MBE using NH3 as a N-source and solid element sources for Ga and Sb. The parameter window for growth was limited due to side reactions like the decomposition of NH3, the desorption of (at high temperature volatile) compounds like Sb and GaSb or the reaction of Sb with NH3. The composition of the layers was analyzed by XRD and RBS. Antimony bulk concentrations of up to 1.6 % could be obtained in GaN. Optical characterization of the samples was performed by CL-measurements and indicate Sb-induced transitions in the 2.2 eV and 1.42 eV range.

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