scholarly journals Benchmark characterization of the thermoelectric properties of individual single-crystalline CdS nanowires by a H-type sensor

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25298-25304 ◽  
Author(s):  
Haidong Wang ◽  
Dingshan Zheng ◽  
Xing Zhang ◽  
Hiroshi Takamatsu ◽  
Weida Hu
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline ◽  
Cds Nanowires ◽  
First Time

A precision H-type sensor method has been developed to measure the thermoelectric performance of individual single-crystalline CdS nanowires for the first time.

Synthesis and characterization of single-crystalline Bi2O2SiO3 nanosheets with exposed {001} facets

2017 ◽  
Vol 7 (17) ◽  
pp. 3791-3801 ◽  
Author(s):  
Shuoping Ding ◽  
Xuyang Xiong ◽  
Xiufan Liu ◽  
Yiqiu Shi ◽  
Qingqing Jiang ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Bismuth Oxide ◽  
Synthesis And Characterization ◽  
Single Crystalline ◽  
One Step ◽  
First Time

Bismuth oxide silicate (Bi2O2SiO3) single-crystalline nanosheets with exposed {001} facets were synthesized for the first time via a facile one-step CTAB-assisted hydrothermal method in the presence of NaOH.

Epitaxial growth and thermoelectric properties of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films

CrystEngComm ◽  
2015 ◽  
Vol 17 (45) ◽  
pp. 8697-8702 ◽  
Author(s):  
Xiaolin Wu ◽  
Jiang-Long Wang ◽  
Hongrui Zhang ◽  
Shufang Wang ◽  
Shengjun Zhai ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Single Crystalline

Enhanced thermoelectric performance of c-axis oriented Bi1−xPbxCuSeO single crystalline thin films.

Synthesis and characterization of single-crystalline Bi19Cl3S27 nanorods

2017 ◽  
Vol 7 (16) ◽  
pp. 3464-3468 ◽  
Author(s):  
Zuozuo Wu ◽  
Yifan Jiang ◽  
Xuyang Xiong ◽  
Shuoping Ding ◽  
Yiqiu Shi ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Single Crystalline ◽  
Solvothermal Route ◽  
First Time

Single-crystalline Bi19Cl3S27 nanorods have been synthesized for the first time via a facile solvothermal route.

Characterization of Single Crystalline CdS Nanowires Synthesized by Solvothermal Method

2014 ◽  
Vol 14 (7) ◽  
pp. 5449-5454 ◽  
Author(s):  
N. M. A. Hadia ◽  
Santiago García-Granda ◽  
José R. García
Keyword(s):  
Solvothermal Method ◽  
Single Crystalline ◽  
Cds Nanowires

Reduction of the Lattice Thermal Conductivity in Immiscible PbS-PbTe Systems

2010 ◽  
Vol 1267 ◽  
Author(s):  
Simon Johnsen ◽  
Steven N Girard ◽  
Ilyia Todorov ◽  
Duck Young Chung ◽  
Mercouri Kanatzidis
Keyword(s):  
Thermal Conductivity ◽  
Thermal Diffusivity ◽  
Thermoelectric Properties ◽  
Local Minimum ◽  
Lattice Thermal Conductivity ◽  
Total Thermal Conductivity ◽  
Electronic Contribution ◽  
Single Crystalline ◽  
End Members

AbstractThe synthesis and properties characterization of several PbS1-xTexx = 0-0.16 samples are presented. Notably it is shown how a local minimum occurs in the thermal diffusivity for the PbS1-xTex samples at x ≈ 0.03. The thermoelectric properties of doped PbS1-xTex with x = 0.03 are reported and the properties are compared to the pure PbS and PbTe end members. The electronic contribution to the total thermal conductivity is analyzed for PbS1-xTexx = 0.03 and it is shown how the lattice thermal conductivity is significantly lowered compared to single crystalline PbS.

Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN2

1998 ◽  
Vol 537 ◽  
Author(s):  
L.D. Zhu ◽  
P.H. Maruska ◽  
P.E. Norris ◽  
P.W. Yip ◽  
L.O. Bouthillette
Keyword(s):  
Epitaxial Growth ◽  
Structural Characterization ◽  
Single Crystalline ◽  
Group Iii ◽  
Lattice Constants ◽  
Wurtzite Lattice ◽  
Nitride Semiconductor ◽  
First Time

AbstractA new nitride semiconductor, single crystalline ZnGeN2 has been successfully grown by MOCVD for the first time. The epitaxial ZnGeN2 is found to be of hexagonal wurtzite lattice without ordering of the zinc and germanium atoms in the pseudomorphic Group III sublattice. Lattice constants of the ZnGeN2 are a = 3.186 ± 0.007 A, c = 5.174 ± 0.012 A, which gives c/a = 1.624.

Enhanced Power Factor of Single Crystalline Lead Telluride Nanowire

2017 ◽  
Vol 901 ◽  
pp. 50-54
Author(s):  
Dedi ◽  
I Dewa Putu Hermida ◽  
Indah Primadona ◽  
Yang Yuan Chen
Keyword(s):  
Electrical Conductivity ◽  
Size Effect ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Lead Telluride ◽  
Thermoelectric Performance ◽  
Temperature Dependent ◽  
Single Crystalline

We present the thermoelectric properties of individual PbTe (lead telluride) nanowire (NW) grown by a stress induced method. Temperature-dependent thermoelectric power and electrical conductivity in PbTe NW with diameter 125 nm were investigated in temperature ranging of 300−400 K. The PbTe NW was found to have a Seebeck coeficient S and electrical conductivity σ of −121 μV K−1 and 138 S cm−1 at 300 K, respectively. The calculated power factor (PF) of PbTe NW (d = 125 nm) demonstrate an enhancement, wich is higher than that have been previously reported in PbTe NWs. Such an enhanced thermoelectric performance can in part be attributed to the size effect of nanowires.

scholarly journals Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN2

1999 ◽  
Vol 4 (S1) ◽  
pp. 149-154 ◽  
Author(s):  
L.D. Zhu ◽  
P.H. Maruska ◽  
P.E. Norris ◽  
P.W. Yip ◽  
L.O. Bouthillette
Keyword(s):  
Epitaxial Growth ◽  
Structural Characterization ◽  
Single Crystalline ◽  
Group Iii ◽  
Lattice Constants ◽  
Wurtzite Lattice ◽  
Nitride Semiconductor ◽  
First Time

A new nitride semiconductor, single crystalline ZnGeN2 has been successfully grown by MOCVD for the first time. The epitaxial ZnGeN2 is found to be of hexagonal wurtzite lattice without ordering of the zinc and germanium atoms in the pseudomorphic Group III sublattice. Lattice constants of the ZnGeN2 are a = 3.186 ± 0.007 A, c = 5.174 ± 0.012 A, which gives c/a = 1.624.

CsBi4Te6: a new facile synthetic method and mid-temperature thermoelectric performance

2016 ◽  
Vol 45 (30) ◽  
pp. 11931-11934 ◽  
Author(s):  
Hua Lin ◽  
Hong Chen ◽  
Ju-Song Yu ◽  
Yu-Jun Zheng ◽  
Peng-Fei Liu ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Synthetic Method ◽  
First Time

A new facile synthetic method and mid-temperature thermoelectric properties of CsBi4Te6 were reported for the first time.

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