Investigation of Structural Disorder Using Electron Temperature in VHF-PECVD on Hydrogenated Amorphous Silicon Films for Thin Film Solar Cell Applications

AbstractWe prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers for thin-film solar cell applications. Transmission electron microscope (TEM) observation revealed that the size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence (PL) of the Si-QDSLs. From the results of the PL measurement, the bandgap of the Si-QDSLs can be controlled from 1.1 eV to 1.6 eV by varying the diameter of silicon quantum dots. ESR measurement indicated that HPT reduced the defect density in a Si-QDSL from 1.83 ×1019 to 1.67 sup1018 cm-3.

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Evaluation of Hydrogenated Amorphous Silicon Oxide Photo-Absorber from Quantum Efficiency in Thin-Film Solar Cell by Fourier Transform Photocurrent Spectroscopy

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.mt-m2020379 ◽

2021 ◽

Author(s):

Nur Syazwana Abd Rahman ◽

Kento Matsui ◽

Shigeru Yamada ◽

Takashi Itoh

Keyword(s):

Thin Film ◽

Fourier Transform ◽

Solar Cell ◽

Amorphous Silicon ◽

Thin Film Solar Cell ◽

Silicon Oxide ◽

Hydrogenated Amorphous Silicon ◽

Photocurrent Spectroscopy ◽

Amorphous Silicon Oxide ◽

Hydrogenated Amorphous

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Study of Light-induced Degradation in Thin Film Silicon Solar Cells: Hydrogenated Amorphous Silicon Solar Cell and Nano-quantum Dot Silicon Thin Film Solar Cell

Journal of the Korean Solar Energy Society ◽

10.7836/kses.2019.39.1.001 ◽

2019 ◽

Vol 39 (1) ◽

pp. 1-9

Author(s):

Ka-Hyun Kim

Keyword(s):

Thin Film ◽

Solar Cell ◽

Amorphous Silicon ◽

Thin Film Solar Cell ◽

Silicon Solar Cell ◽

Hydrogenated Amorphous Silicon ◽

Silicon Solar Cells ◽

Silicon Thin Film ◽

Amorphous Silicon Solar Cell ◽

Hydrogenated Amorphous

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Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium

MRS Proceedings ◽

10.1557/opl.2013.746 ◽

2013 ◽

Vol 1536 ◽

pp. 175-180 ◽

Cited By ~ 2

Author(s):

W. Beyer ◽

W. Hilgers ◽

D. Lennartz ◽

F.C. Maier ◽

N.H. Nickel ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Low Temperatures ◽

Plasma Deposition ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Hot Wire ◽

Common Features ◽

Hydrogenated Amorphous

ABSTRACTAn important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

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Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique

2011 37th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2011.6185850 ◽

2011 ◽

Author(s):

L. Meng ◽

S. Steen ◽

C. K. Koo ◽

C. S. Bhatia ◽

A. G. Street ◽

...

Keyword(s):

Thin Film ◽

Solar Cell ◽

Thin Film Solar Cell ◽

Focused Ion Beam ◽

Ion Beam ◽

Hydrogenated Amorphous Silicon ◽

Induced Current ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Hydrogenated Amorphous Silicon Based Solar Cells: Optimization Formalism and Numerical Algorithm

MRS Proceedings ◽

10.1557/proc-1153-a07-05 ◽

2009 ◽

Vol 1153 ◽

Author(s):

Anatoli Shkrebtii ◽

Yuriy Kryuchenko ◽

Anaroliy Sachenko ◽

Igor Sokolovskyi ◽

Franco Gaspari

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Amorphous Film ◽

Solar Cell Performance ◽

Transparent Conducting ◽

Silicon Based ◽

Hydrogenated Amorphous

AbstractThin film hydrogenated amorphous silicon (a-Si:H) is widely used in photovoltaics. In order to get the best possible performance of the a-Si:H solar cells it is important to optimize the amorphous film and solar cells in terms their parameters such as mobility gap, p-, i- and n-layer doping levels, electron and hole lifetime and their mobilities, resistance of p-, i- and n-layers, contact grid geometry and parameters of the transparent conducting and antireflecting layers, and others. To maximize thin a-Si:H film based solar cell performance we have developed a general numerical formalism of photoconversion, which takes into account all the above parameters for the optimization. Application of the formalism is demonstrated for typical a-Si:H based solar cells before Staebler-Wronski (SW) light soaking effect. This general formalism is not limited to a-Si:H based systems only, and it can be applied to other types of solar cells as well.

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