Coherent TeraHertz Radiation Generation Due to Carrier Interaction with Low-Temperature Optical Phonons in Semiconductors: Achievements and Perspectives

2007 ◽  
Vol 2 (1) ◽  
pp. 11-35 ◽  
Author(s):  
E. Starikov ◽  
P. Shiktorov ◽  
V. Gružinskis ◽  
L. Reggiani ◽  
L. Varani
Keyword(s):  
Low Temperature ◽  
Terahertz Radiation ◽  
Optical Phonons ◽  
Radiation Generation ◽  
Carrier Interaction

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

2017 ◽  
Vol 51 (3) ◽  
pp. 310-317 ◽  
Author(s):  
G. B. Galiev ◽  
M. M. Grekhov ◽  
G. Kh. Kitaeva ◽  
E. A. Klimov ◽  
A. N. Klochkov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Terahertz Radiation ◽  
Epitaxial Films ◽  
Radiation Generation ◽  
Inp Substrates

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

2017 ◽  
Vol 51 (4) ◽  
pp. 503-508 ◽  
Author(s):  
G. B. Galiev ◽  
S. S. Pushkarev ◽  
A. M. Buriakov ◽  
V. R. Bilyk ◽  
E. D. Mishina ◽  
...  
Keyword(s):  
Low Temperature ◽  
Terahertz Radiation ◽  
Epitaxial Films ◽  
Radiation Generation ◽  
Low Temperature Grown Gaas

Generation of TeraHertz radiation assisted by optical phonons in nitride-based quantum wells and heterolayers

2008 ◽  
Vol 5 (1) ◽  
pp. 236-239
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gružinskis ◽  
L. Varani ◽  
C. Palermo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Terahertz Radiation ◽  
Optical Phonons

Designing organic molecules for terahertz radiation generation in robust crystals

2010 ◽  
Author(s):  
Koen Clays ◽  
Rebecca J. Docherty ◽  
John Fielden ◽  
Madeleine Helliwell ◽  
James Raftery ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Organic Molecules ◽  
Radiation Generation

Research Progress of Micro-Nano Optical Structure and Terahertz Radiation Generation Technology

2021 ◽  
Vol 41 (8) ◽  
pp. 0823017
Author(s):  
韩张华 Han Zhanghua ◽  
孙开礼 Sun Kaili ◽  
蔡阳健 Cai Yangjian
Keyword(s):  
Terahertz Radiation ◽  
Research Progress ◽  
Radiation Generation ◽  
Generation Technology ◽  
Optical Structure

Examining the Role of Free Carrier Concentration on the Phonon Lifetimes in GaN Using Raman Spectroscopy

2007 ◽  
Author(s):  
Thomas Beechem ◽  
Samuel Graham
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Performance ◽  
Uncertainty Relation ◽  
Free Carrier ◽  
Optical Phonons ◽  
Time Uncertainty ◽  
Longitudinal Phonon ◽  
Optical Modes ◽  
Carrier Interaction

The lifetimes of polar optical phonons are known to affect the electrical and thermal performance of gallium nitride (GaN) based devices. Utilizing the energy-time uncertainty relation, this study investigates these lifetimes using Raman spectroscopy for a series of samples having free carrier concentrations ranging from 1.24e18 to 3e17 cm−3. By measuring across the typical operating temperatures of these devices, the mechanisms responsible for scattering of 5 separate optical modes are elucidated. It is found that phonon-carrier interaction directly determines the lifetime of the polar optical A1(LO) mode while indirectly influencing the modes into which this longitudinal phonon decays, namely, E1 and A1(TO). Thus understanding the entire phonon energy cascade is vital both for management of the so called “hot phonon” effect as well as modeling of carrier-phonon interactions.

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