Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

2017 ◽  
Vol 51 (3) ◽  
pp. 310-317 ◽  
Author(s):  
G. B. Galiev ◽  
M. M. Grekhov ◽  
G. Kh. Kitaeva ◽  
E. A. Klimov ◽  
A. N. Klochkov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Terahertz Radiation ◽  
Epitaxial Films ◽  
Radiation Generation ◽  
Inp Substrates

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

2017 ◽  
Vol 51 (4) ◽  
pp. 503-508 ◽  
Author(s):  
G. B. Galiev ◽  
S. S. Pushkarev ◽  
A. M. Buriakov ◽  
V. R. Bilyk ◽  
E. D. Mishina ◽  
...  
Keyword(s):  
Low Temperature ◽  
Terahertz Radiation ◽  
Epitaxial Films ◽  
Radiation Generation ◽  
Low Temperature Grown Gaas

Incorporation of oxygen and chlorine atoms into low‐temperature (850 °C) silicon epitaxial films by chemical vapor deposition

1995 ◽  
Vol 66 (21) ◽  
pp. 2867-2869 ◽  
Author(s):  
Akihiro Miyauchi ◽  
Kazuhiro Ueda ◽  
Yousuke Inoue ◽  
Takaya Suzuki ◽  
Yoshinori Imai
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Chlorine Atoms

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

1998 ◽  
Vol 533 ◽  
Author(s):  
A. Morrya ◽  
M. Sakuraba ◽  
T. Matsuura ◽  
J. Murota ◽  
I. Kawashima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Deposition Rate ◽  
Epitaxial Films ◽  
Similar Degree ◽  
Gas Mixture ◽  
Heavy Doping

AbstractIn-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

Designing organic molecules for terahertz radiation generation in robust crystals

2010 ◽  
Author(s):  
Koen Clays ◽  
Rebecca J. Docherty ◽  
John Fielden ◽  
Madeleine Helliwell ◽  
James Raftery ◽  
...  
Keyword(s):  
Terahertz Radiation ◽  
Organic Molecules ◽  
Radiation Generation

Research Progress of Micro-Nano Optical Structure and Terahertz Radiation Generation Technology

2021 ◽  
Vol 41 (8) ◽  
pp. 0823017
Author(s):  
韩张华 Han Zhanghua ◽  
孙开礼 Sun Kaili ◽  
蔡阳健 Cai Yangjian
Keyword(s):  
Terahertz Radiation ◽  
Research Progress ◽  
Radiation Generation ◽  
Generation Technology ◽  
Optical Structure
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