Response of Bone Subjected to Optimized High Dose Irradiation

2008 ◽  
Vol 24 (5) ◽  
pp. 387-400 ◽  
Author(s):  
H. Wilson Burgess ◽  
James Mackrell ◽  
Derek Toms ◽  
Anuradha Karunanidhi ◽  
Swaroopa Vaidya ◽  
...  
Keyword(s):  
2008 ◽  
Vol 43 (2-6) ◽  
pp. 487-491 ◽  
Author(s):  
H.J. Khoury ◽  
P.L. Guzzo ◽  
L.B.F. Souza ◽  
T.M.B. Farias ◽  
S. Watanabe

Author(s):  
Daisuke Kawahara ◽  
Yasushi Nagata ◽  
Yoichi Watanabe

Abstract We investigated the effects of indirect apoptotic cell death due to vascular damage on tumor response to a single large dose with an improved two-dimensional cellular automata model. The tumor growth was simulated by considering the oxygen and nutrients supplied to the tumor through the blood vessels. The cell damage processes were modeled by taking account of the direct cell death and the indirect death due to the radiation-induced vascular damages. The radiation increased the permeation of oxygen and nutrients through the blood vessel or caused the breakdown of the vasculature. The amount of oxygen in cancer cells affected the response of cancer cells to radiation and the tumor growth rate after irradiation. The lack of oxygen led to the apoptotic death of cancer cells. We calculated the tumor control probability (TCP) at different radiation doses, D, the probability of apoptotic death, PO2_ap, the threshold of the oxygen level for indirect apoptotic death, O2t, the average oxygen level in cancer cells, [O2]av, and the vessel survival probability after radiation damage, Pv. Due to the vessel damage, indirect cell death led to a 4% increase in TCP for the dose ranging from 15 Gy to 20 Gy. TCP increased with increasing PO2_ap and O2t due to increased apoptotic death. The variation of TCP as a function of [O2]av exhibited the minimum at [O2]av of 2.7%. The apoptosis increased as [O2]av decreased, leading to an increasing TCP. On the other hand, the direct radiation damage increased, and the apoptosis decreased for higher [O2]av, resulting in a higher TCP. We showed by modeling the radiation damage of blood vessels in a 2D CA simulation that the indirect apoptotic death of cancer cells, caused by the reduction of the oxygen level due to vascular damage after high dose irradiation, increased TCP.


2018 ◽  
Vol 170 ◽  
pp. 01011
Author(s):  
Eva Montbarbon ◽  
Matthieu Hamel ◽  
Dominique Tromson ◽  
Marie-Noëlle Amiot ◽  
Camille Frangville ◽  
...  

1984 ◽  
Vol 35 ◽  
Author(s):  
C. R. Wie ◽  
T. Vreeland ◽  
T. A. Tombrello

ABSTRACTMeV ion irradiation effects on semiconductor crystals, GaAs(100) and Si (111) and on an insulating crystal CaF2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs (100) saturates to a certain level after a high dose irradiation (typically 1015/cm2), resulting in a uniform lattice spacing about 0.4% larger than the original spacing of the lattice planes parallel to the surface. The layer of uniform strain corresponds in depth to the region where electronic energy loss is dominant over nuclear collision energy loss. The saturated strain level is the same for both p-type and n-type GaAs. In the early stages of irradiation, the strain induced in the surface is shown to be proportional to the nuclear stopping power at the surface and is independent of electronic stopping power. The strain saturation phenomenon in GaAs is discussed in terms of point defect saturation in the surface layer.An isochronal (15 min.) annealing was done on the Cr-doped GaAs at temperatures between 200° C and 700° C. The intensity in the diffraction peak from the surface strained layer jumps at 200° C < T ≤ 300° C. The strain decreases gradually with temperature, approaching zero at T ≤ 500° C.The strain saturation phenomenon does not occur in the irradiated Si. The strain induced in Si is generally very low (less than 0.06%) and is interpreted to be mostly in the layers adjacent to the maximum nuclear stopping region, with zero strain in the surface layer. The data on CaF2 have been analysed with a kinematical x-ray diffraction theory to get quantitative strain and damage depth profiles for several different doses.


2004 ◽  
Vol 71 (1-2) ◽  
pp. 515-518 ◽  
Author(s):  
V Plaček ◽  
V Svobodová ◽  
B Bartonı́ček ◽  
J Rosmus ◽  
M Čamra

2016 ◽  
Vol 90 ◽  
pp. 90-93 ◽  
Author(s):  
V.S. Kortov ◽  
V.A. Pustovarov ◽  
S.V. Zvonarev ◽  
T.V. Shtang

Sign in / Sign up

Export Citation Format

Share Document