Расчет ядерных тормозных способностей в квазиклассическом приближении

The results of calculating nuclear stopping in the semiclassical approximation for the systems H-Be, H-C, H-W, O-C, O-Be, O-Al are presented. It was found that in the presence of a well in the interatomic interaction potential, an additional maximum appears in the dependence of the nuclear stopping on the energy of the bombarding particles. When using the universal potential without a well, this feature is absent. It is shown that by scaling the data obtained for systems with hydrogen are recalculated for collisions with the participation of hydrogen isotopes D and T. The results obtained are in good agreement with classical calculations, which is explained by the fact that large scattering angles make the main contribution to the nuclear stopping, and the applicability criterion changes to the condition: angular momentum ℓ >> 1.

Irradiation Effects of Swift Heavy Ions Detected by Refractive Index Depth Profiling

Evolution of depth profiles of the refractive index in Y3Al5O12 (YAG) crystals were studied under 200 MeV 136Xe14+ ion irradiation, since the index can be related with the stress change and/or the defect formation by the irradiation. Using the prism-coupling and the end-surface coupling methods, various waveguide (WG) modes were detected. Then, the index depth profiles were determined by reproducing the observed WG modes. The index changes were observed at three different depth regions; (i) a sharp dip at 13 μm in depth, which is attributed to the nuclear stopping Sn peak, (ii) a plateau near the surface between 0 and 3 μm in depth, which can be ascribed to the electronic stopping Se, since Se has a very broad peak at the surface, and (iii) a broad peak at 6 μm in depth. Since the last peak is ascribed to neither of Se nor Sn peak, it could be attributed to the synergy effect of Se and Sn.

Computational Study of Damage Profiles and Energy Loss of Gallium Ion in Germanium Substrate

Computational calculation of energy loss and study of damage profiles during ionic implantation by gallium ions on germanium had been carried out. The required energies for doping of gallium ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM; Stopping and Range of Ions in Matter. The ions when implanted independently on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 130 keV gallium ion, the energy used for ionization, phonon production and vacancies creation are 37.713 keV (29.01% of incident energy), 90.006 keV (64.29% of incident energy) and 8.71 keV (6.7% of incident energy) respectively. The amount of target displacement, replacement collisions and vacancies were also evaluated. Doping of gallium ions on germanium also reveals that the energy loss due to nuclear stopping was greater than electronic stopping.

Study of damage profiles and energy calculation of arsenic ions during ion implantation on Germanium

Computational calculation of energy loss and damage profiles when implanted by arsenic ions on amorphous germanium during ion implantation had been carried out. The required energies for doping of arsenic ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM. These ions when implanted on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 140 keV arsenic ion, the energy consumption for ionization, phonon production and vacancies creation are 39.634 keV (28.31% of incident energy), 90.888 keV (64.92% of incident energy) and 9.478 keV (6.77% of incident energy), respectively. The amount of target displacement, replacement collisions and vacancies were also evaluated. Doping of arsenic ions on germanium also revealed that the energy loss due to nuclear stopping was greater than electronic stopping. Significantly, surface hardness and electrical conductivity on germanium cannot be improved with calculated energies. BIBECHANA 17 (2020) 96-103